• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.137-140
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• 2014

With the recent advent of through silicon via (TSV) technology, wafer level-TSV interconnection become feasible in high volume manufacturing. To increase the manufacturing productivity, it is required to develop equipment for backside passivation layer deposition for TSV wafer bonding process with high deposition rate and low film stress. In this research, we investigated the relationship between process parameters and the induced wafer stress of PECVD silicon nitride film on 300 mm wafers employing statistical and artificial intelligence modeling. We found that the film stress increases with increased RF power, but the pressure has inversely proportional to the stress. It is also observed that no significant stress change is observed when the gas flow rate is low.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.80-84
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• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.147-150
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• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.10
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• pp.1241-1248
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• 2012

The objective of this study is to evaluate the thermal damage characterization of a silicon wafer subjected to a CW laser beam. The variation in temperature and stress during laser beam irradiation has been predicted using a three-dimensional numerical model. The simulation results indicate that the specimen might crack when a 93-$W/cm^2$ laser beam is irradiated on the silicon wafer, and surface melting can occur when a 186-$W/cm^2$ laser beam is irradiated on the silicon wafer. In experiments, straight cracks in the [110] direction were observed for a laser irradiance exceeding 102 $W/cm^2$. Furthermore, surface melting was observed for a laser irradiance exceeding 140 $W/cm^2$. The irradiance for surface melting is less than that in the simulation results because multiple reflections and absorption of the laser beam might occur on the surface cracks, increasing the absorbance of the laser beam.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.159-163
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• 2001

The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the $SiO_2$-$SiO_2$ bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the $SiO_2$-$SiO_2$ bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

• International Journal of Quality Innovation
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• v.7 no.2
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• pp.141-156
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• 2006

This study describes a novel algorithm for optimizing the quality yield of silicon wafer slicing. 12 inch wafer slicing is the most difficult in terms of semiconductor manufacturing yield. As silicon wafer slicing directly impacts production costs, semiconductor manufacturers are especially concerned with increasing and maintaining the yield, as well as identifying why yields decline. The criteria for establishing the proposed algorithm are derived from a literature review and interviews with a group of experts in semiconductor manufacturing. The modified Delphi method is then adopted to analyze those results. The proposed algorithm also incorporates the analytic hierarchy process (AHP) to determine the weights of evaluation. Additionally, the proposed algorithm can select the evaluation outcomes to identify the worst machine of precision. Finally, results of the exponential weighted moving average (EWMA) control chart demonstrate the feasibility of the proposed AHP-based algorithm in effectively selecting the evaluation outcomes and evaluating the precision of the worst performing machines. So, through collect data (the quality and quantity) to judge the result by AHP, it is the key to help the engineer can find out the manufacturing process yield quickly effectively.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1196-1200
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• 2004

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. In this study, a bubble-powered micropump was fabricated and tested. The micropump consists of two-parallel micro line heaters, a pair of nozzle-diffuser flow controller and a 1 mm in diameter, 400 ${\mu}m$ in depth pumping chamber. The two-parallel micro line heaters with 20 ${\mu}m-width$ and 200 ${\mu}m-length$ were fabricated to be embedded in the silicon dioxide layer of a wafer which serves as a base plate for the micropump. The pumping chamber, the pair of nozzle-diffuser unit and microchannels including the liquid inlet and outlet port were fabricated by etching through another silicon wafer. A glass wafer (thickness of $525{\pm}15$ ${\mu}m$) having two holes of inlet and outlet ports of liquid serve as upper plate of the pump. Finally the silicon wafer of the base plate, the silicon wafer of pumping chamber and the glass wafer were aligned and bonded (Si-Si bonding and anodic bonding). A sequential photograph of bubble nucleation, growth and collapse was visualized by CCD camera. Clearly liquid flow through the nozzle during the period of bubble growth and slight back flow of liquid at the end of collapsing period can be seen. The mass flow rate was found to be dependent on the duty ratio and the operation frequency. As duty ratio increases, flow rate decreases gradually when the duty ratio exceeds 60%. Also as the operation frequency increases, the flow rate of the micropump decreases slightly.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.921-926
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• 1997

SOI(Silicon On lnsulator) technology is many advantages in the gabrication of MOS(Metal-Oxide Semiconductor) and CMOS(Complementary MOS) structures. These include high speed, lower dynamic power consumption,greater packing density, increased radiation tolearence et al. In smiple form of bonded SOL wafer manufacturing, creation of a bonded SOI structure involves oxidizing at least one of the mirror polished silicon surfaces, cleaning the oxidized surface and the surface of the layer to which it will be bonded,bringing the two cleanded surfaces together in close physical proximity, allowing the subsequent room temperature bonding to proceed to completion, and than following this room temperature joining with some form of heat treatment step,and device wafer is thinned to the target thickness. This paper has been performed to investigate the possibility of the bonded SOI wafer manufacturing Especially, we focused on the bonding quality and thinning method. Finally,we achieved the bonded SOI wafer that Si layer thickness is below 3 .mu. m and average roughness is below 5.angs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.