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http://dx.doi.org/10.3740/MRSK.2006.16.2.080

Removal of Cu and Fe Impurities on Silicon Wafers from Cleaning Solutions  

Kim, In-Jung (Leading Project Team, R & D Center, Siltron Inc.)
Bae, So-Ik (Leading Project Team, R & D Center, Siltron Inc.)
Publication Information
Korean Journal of Materials Research / v.16, no.2, 2006 , pp. 80-84 More about this Journal
Abstract
The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.
Keywords
cleaning solution; metal; contamination; silicon wafer; Pourbaix diagram;
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  • Reference
1 J. M. Lim, B. Y. Jeon and C. Lee, Materials Chemistry and Physics, 70, 129 (2001)   DOI   ScienceOn
2 H. Aomi, F. Derouin and T. Ohmi, Mat. Res. Soc. Symp. Proc. 315, 333 (1993)   DOI
3 W. Kern, Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, New Jersey (1992)
4 W. Kern, The Evolulion of Silicon Wafer Cleaning Technology, J. Electrochem. Soc., 137, 1887 (1990)   DOI
5 M. Hourai, T. Naridomi, Y. Oka, K. Murakami, S. Sumita, N. Fujino and T. Shirawa, 'A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer,' Jpn. J. Appl. Phys, 12, L2361 (1988)   DOI   ScienceOn
6 Marcel Pourbaix, 'Atlas of Electrochemical Equilibriai in Aqueous Solutions', NACE International Cebelcor, 307 (1974)
7 T. Ohmi, T. Irnaoka, T. Kezuka, J. Takano and M. Kogure, J. Electrochem. Soc., 140, 811 (1993)   DOI
8 Z. Radzimski, IEEE Trans. Electron Dev., ED-29, 1336 (1982)   DOI   ScienceOn
9 L. Mouche and F. Taradif, J. Electrochem. Soc., 141, 1684 (1994)   DOI
10 J. S. Montgomery, J. P. Bamak, A. Bayoumi, J. R. Hanser and R. J. Nemanich, Electrochem. Soc. Symp. Proc., 94, 296 (1994)
11 T. Hattori, Solid State Tech., 42, 73 (1999)
12 H. Morita, J. Ida, T. Ii and T. Ohmi, Proceeding of the IEEE International Symposium on Semiconductor Manufacturing Conference, 453 (1999)   DOI
13 G. Gould and E. A. Irene, J. Electrochem. Soc., 134, 1031 (1987)   DOI
14 G. Vereecke, E. Rohr and M. M. Heyns, Solid State Phenomena, 187 (1999)   DOI
15 L. Mouche and F. Trardif, J. Electrochem. Soc., 141, 1684 (1994)   DOI
16 W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970)
17 H. Aoki, S. Yamasski, Y. Shiramizu, N. Aoto and T. Imaoks, Extended Abstract of the 1995 International Conference on Solid State Device and Materials, 252 (1995)