• 한국지능시스템학회논문지
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• 제24권5호
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• pp.457-461
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• 2014

생물학적 신경 세포의 모델링을 위한 펄스타입 실리콘 뉴런 회로를 $0.18{\mu}m$ CMOS 공정을 이용하여 반도체 집적회로로 설계하였다. 제안하는 뉴런 회로는 입력 전류신호를 위한 커패시터 입력단과, 출력 전압신호 생성을 위한 증폭단 및 펄스신호 초기화를 위한 MOS 스위치로 구성된다. 전압신호 입력을 전류신호 출력으로 변환하는 기능의 시냅스 회로는 몇 개의 PMOS와 NMOS 트랜지스터로 이루어지는 범프회로를 사용한다. 제안하는 뉴런 모델의 검증을 위하여, 2개의 뉴런과 시냅스가 직렬연결된 뉴런체인을 구성하여 SPICE 모의실험을 실시하였다. 모의실험 결과, 뉴런신호의 생성과 시냅스 전달특성의 정상적인 동작을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.383-390
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• 2014

This paper presents an excitatory CMOS neuron oscillator circuit design, which can synchronize two neuron-bursting patterns. The excitatory CMOS neuron oscillator is composed of CMOS neurons and CMOS excitatory synapses. And the neurons and synapses are connected into a close loop. The CMOS neuron is based on the Hindmarsh-Rose (HR) neuron model and excitatory synapse is based on the chemical synapse model. In order to fabricate using a 0.18 um CMOS standard process technology with 1.8V compatible transistors, both time and amplitude scaling of HR neuron model is adopted. This full-chip integration minimizes the power consumption and circuit size, which is ideal for motion control unit of the proposed bio-mimetic micro-robot. The experimental results demonstrate that the proposed excitatory CMOS neuron oscillator performs the expected waveforms with scaled time and amplitude. The active silicon area of the fabricated chip is $1.1mm^2$ including I/O pads.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.755-759
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• 2014

We propose an integrate-and-fire neuron circuit and synaptic devices with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET to imitate biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period, using floating body MOSFET. The neuron circuit sends feedback signal to the synaptic transistor for long-term memory.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.658-663
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• 2015

In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

• 센서학회지
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• 제27권1호
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• pp.64-67
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• 2018

A new CMOS neuron circuit for implementing bistable synapses with spike-timing-dependent plasticity (STDP) properties has been proposed. In neuromorphic systems using STDP properties, the short-term dynamics of the synaptic efficacies are governed by the relative timing of the pre- and post-synaptic spikes, and the efficacies tend asymptotically to either a potentiated state or to a depressed one on long time scales. The proposed circuit consists of a negative shifter, a current starved inverter and a schmitt trigger designed using 0.18um CMOS technology. The simulation result shows that the proposed circuit can reduce the total size of neurons, and the spike energy of the proposed circuit is much less compared to the conventional circuits.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 추계학술대회
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• pp.31-34
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• 1997

A semiconductor microelectrode array has been successfully used in obtaining single unit recordings from medial giant nerve of clay fish, rat saphenous nerve and abdominal ganglia of aplysia. The recording device fabricated using silicon microfabrication techniques is a depth-probe type and, previously, has been mostly used to record from central nerve system of vertebrates. From invertebrates, and also from peripheral nerves of vertebrates, however, the quality of the recorded signal depends heavily on the recording conditions, such as the proximity of the electrode site to the nerve cells and the size of the neuron. We have modeled the signal to noise ratio as unctions of these parameters and compared the experimental data with the calculated values thus obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.657-663
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• 2016

In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.