JSTS:Journal of Semiconductor Technology and Science

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Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity

  • Kwon, Min-Woo (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kim, Hyungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Park, Jungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
  • Received : 2015.07.13
  • Accepted : 2015.10.11
  • Published : 2015.12.30
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Abstract

In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

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References

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