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http://dx.doi.org/10.5573/JSTS.2014.14.6.755

Integrate-and-Fire Neuron Circuit and Synaptic Device with Floating Body MOSFETs  

Kwon, Min-Woo (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
Kim, Hyungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
Park, Jungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.6, 2014 , pp. 755-759 More about this Journal
Abstract
We propose an integrate-and-fire neuron circuit and synaptic devices with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET to imitate biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period, using floating body MOSFET. The neuron circuit sends feedback signal to the synaptic transistor for long-term memory.
Keywords
Integrate-and-fire neuron circuit; synaptic transistor; long and short-term memory; floating body MOSFET;
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