• 한국표면공학회지
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• 제55권6호
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• pp.441-447
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• 2022

Silicon-based materials are one of the most promising anode active materials in lithium-ion battery. A carbon layer decorated on the surface of silicon particles efficiently suppresses the large volume expansion of silicon and improves electrical conductivity. Carbon coating through chemical vapor deposition (CVD) is one of the most effective strategies to synthesize carbon- coated silicon materials suitable for mass production. Herein, we synthesized carbon coated SiOx via pilot scale CVD reactor (P-SiO_x@C) and carbon coated SiO_x via industrial scale CVD reactor (I-SiO_x@C) to identify physical characteristic changes according to the CVD capacity. Reduced size silicon domains and local non-uniform carbon coating layer were detected in I-SiO_x@C due to non-uniform temperature distribution in the industrial scale CVD reactor with large capacity, resulting in increased surface area due to severe electrolyte consumption.

• Journal of Information Display
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• 제13권3호
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• pp.107-111
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• 2012

An almost pure phase of $Ba_3Si_6O_{12}N_2$ doped with $Eu^{2+}$ was successfully synthesized through the ammonia nitridation of an oxide precursor prepared through an aqueous-solution method, using propylene- glycol-modified silane. The emission peak intensity of the obtained $Ba_3Si_6O_{12}N_2:Eu^{2+}$ was -2.2 times higher than that of the sample prepared through a solid-state reaction method.

• 한국응용과학기술학회지
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• 제32권4호
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• pp.718-723
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• 2015

For the fabrication of the Si negative electrode in Li-ion batteries (LIBs) containing the cross-linking polymer binder, in this work, the urethane acrylate (UA) oligomer was synthesized via a simple synthetic process. The cross-linked poly(urethane acrylate) (CPUA)/carbone black (CB)/Si composite (CPUA/CB/Si composite) was fabricated through reactions between their reactive vinyl segments in the UA oligomer. Interestingly, the CPUA/CB/Si composite showed better cycle performance than the poly(vinylidene fluoride) (PVdF)/CB/Si composite (PVdF/CB/Si composite) and the polyurethane (PU)/CB/Si composite (PU/CB/Si composite). The CPUA/CB/Si composite had the best lithiation of about $2586mAh\;g^{-1}$. The UA oligomer showed a good compatibility with the electrode materials and current collector after and before a curing process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.171-172
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• 2009

TSV(through via silicon)를 이용한 Via의 Cu 충전에서 Seed 층의 역할은 전류의 흐름을 가능하게 하는 중요한 역할을 하고 있다. Via에 각각 Ti/Au, Ti/Cu를 증착한 후 Ti/Cu가 Ti/Au를 대체 할 수 있는지를 알아보기 위해 먼저 실리콘 웨이퍼에 via를 형성하고, 형성된 via에 기능성 박막층으로 절연층(SiO2) 및 시드층을 형성하였다. 전해도금을 이용하여 Cu를 충전한 결과 Ti/Au 및 Ti/Cu를 증착한 두 시편 모두 via와 seed층 접합면에 박리 등의 결함이 없었고, via 내부 또한 void나 seam 등이 관찰되지 않고 우수하게 충전된 것을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.243.2-243.2
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• 2009

• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• 마이크로전자및패키징학회지
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• 제14권4호
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• pp.63-69
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• 2007

Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 연구하였다. Ag 페이스트 막을 유리기판에 형성하고 관통 비아 홀이 형성된 Si 기판을 접착시켜 Ag 페이스트 막을 Cu 비아 형성용 전기도금 씨앗층으로 사용하였다. Ag 전기도금 씨앗층에 직류전류 모드로 $20mA/cm^2$와 $30mA/cm^2$의 전류밀도를 인가하여 Cu 비아 filling을 함으로써 직경 $200{\mu}m$, 깊이 $350{\mu}m$인 도금결함이 없는 Cu 비아를 형성하는 것이 가능하였다. Cu 비아가 형성된 Si 기판에 Ti/Cu/Ti metallization 및 배선라인 형성공정, Au 패드 도금공정, Sn 솔더범프 전기도금 및 리플로우 공정을 순차적으로 진행함으로써 Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 이룰 수 있었다.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.1-8
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• 2022

TSV 기술을 포함한 고밀도, 고집적 패키징 기술은 IoT, 6G/5G 통신, HPC (high-performance computing)등 여러 분야에서 중요한 기술로 여겨지고 있다. 2차원에서 고집적화를 달성하는 것은 물리적 한계에 도달하게 되었으며, 따라서 3D 패키징 기술을 위하여 다양한 연구들이 진행되고 있다. 본 고에서는 scallop의 형성 원인과 영향, 매끈한 측벽을 만들기 위한 scallop-free 에칭 기술, TSV 표면의 Cu bonding에 대해서 자세히 조사하였다. 이러한 기술들은 고품질 TSV 형성 및 3D 패키징 기술에 영향을 줄 것으로 예상한다.

• 소성∙가공
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• 제28권3호
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• pp.123-129
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• 2019

Hypereutectic Al-Si alloys have been widely utilized for wear-resistant components in the automotive industry. In order to expand the application of Hypereutectic Al-Si alloys, the addition of alloying elements forming a stable precipitate at high temperature is required. Thermally stable inter metallic compounds can be formed through the addition of transition elements such as Fe, Ni to Al alloys. However, the amount of transition element to be added to Al alloys is limited due to their low solid solubility. Also, hypereutectic Al-Si-Fe alloys form coarse primary Si phases and needle-shaped intermetallic compounds during solidification in the general casting processes. In this study, the effects of the destruction of Intermetallic compound and Si phase are investigated via hot extrusion. Both the microstructure and mechanical properties are discussed under different extrusion conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.