• 한국재료학회지
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• 제20권5호
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• pp.262-266
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• 2010

ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.

• 한국진공학회지
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• 제16권2호
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• pp.145-152
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• 2007

자외선 광여기 전자현미경 (Ultraviolet - Photoelectron Emission Microscopy: UV-PEEM)을 이용하여 Si (001)과 (113) 표면에 Ge을 증착하면서 실시간으로 나노구조의 형성과 크기 및 형태 변화과정을 조사하였다. Ge은 PBEM에 부착된 e-beam 증착기를 이용하여 $450-550^{\circ}C$ 온도에서 in situ로 증착하면서 표면의 변화를 PEEM으로 관찰하였다. Ge을 ${\sim}0.4\;ML/min$의 증착율로 ${\sim}4\;ML$ 이상 두께로 증착했을 때, 두 Si 표면에서 Ge의 균일한 변형층(strained layer) 위에 island 구조가 형성되었다. 초기에 형성된 원형 모양의 island는 연속적인 Ge 증착에 따라, ripening 과정에 의해 크기가 점차 성장되었고 밀도는 감소하였으나, 형태는 원형 모양을 유지하였다. 시료 성장 후 공기 중 AFM 측정 결과, Si(001) 표면에는 dome 형태의 Ge island가 Si(113) 표면에는 윗면이 평판하고 다면의 옆면을 지닌 island 구조가 형성됨이 확인되었다. 반면에 ${\sim}0.15\;ML/min$의 낮은 증착율로 Ge을 증착했을 때, Si(113) 표면에서 원형의 Ge island가 길죽한(elongated) 형태의 나노선 구조로 변형됨이 관찰되었다. 또한, 계속적인 Ge 증착 두께를 증가시킴에 따라 표면에는 새로운 island가 형성되지 않고, 기존의 island들이 점차 길이 방향으로 크기가 증가하면서 [$33\bar{2}$] 방향으로 배열하였다. 이와 같은 Ge 나노구조의 형성과 형태 변화는 나노구조 형성과정에서 변형이완(strain relaxation)과 가원자(adatom)의 표면 동역학적 효과와 깊은 관련이 있는 것으로 분석된다.

• 제어로봇시스템학회논문지
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• 제10권7호
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• pp.604-610
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• Advances in nano research
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• 제2권1호
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• pp.1-14
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• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.115-115
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• 2003

Silica nanostructures have been attached considerable attention because of theirs potential application in mesoscopic research and the potential use of large surface area structure of catalysts. SiO2 nannowire and nanorods was synthesized various methods including thermal evaporation, chemical vapor deposition (CVD), and laser ablation methods. In this experiments, SiO2 nanowire were grown using thermal evaporation method followed by VS (Vapor-Solid) growth mechanisms. Grown SiO2 nanowires were amorphous phases because of its low growth temperatures. Grown nanowires diameters were about 20-40nm at all growth conditions, but its microstructres were different by that used substrate because of it's oxygen contents.

• Mass Spectrometry Letters
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• 제7권4호
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• pp.91-95
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• 2016

In recent years, matrix-free laser desorption ionization (LDI) for mass spectrometry of thermally labile molecules has been an important research subject in the pursuit of new ionization methods to serve as alternatives to the conventional matrix-assisted laser desorption ionization (MALDI) method. While many recent studies have reported successful LDI of thermally labile molecules from various surfaces, mostly from surfaces with nanostructures, understanding of what drives the LDI process still requires further study. This article briefly reviews the thermal aspects involved in the LDI mechanism, which can be characterized as rapid surface heating. The thermal mechanism was supported by observed LDI and postsource decay (PSD) of peptide ions produced from flat surfaces with special thermal properties including amorphous Si (a-Si) and tungsten silicide ($WSi_x$). In addition, the concept of rapid surface heating further suggests a practical strategy for the preparation of LDI sample plates, which allows us to choose various surface materials including crystalline Si (c-Si) and Au tailorable to specific applications.

• 한국산학기술학회논문지
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• 제19권1호
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• pp.699-704
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• 2018

일차원 나노구조물은 양자 갇힘 효과 및 나노와이어가 갖는 체적 대비 높은 표면적 비에 기인하는 독특한 전기적, 광학적, 광전기적, 전기화학적 특성으로 인하여 많은 주목을 받아왔다. 특히 수직으로 성장된 나노와이어는 체적 대비 높은 표면적 비의 특성을 나타낸다. VLS(Vapor-Liquid-Soild) 공정은 나노구조물의 성장 과정에서 자기정렬 효과 때문에 더욱 주목을 받는다. 본 연구에서는 두 영역 열화학 기상증착법을 이용하여 Si\$SiO_2$(300 nm)\Pt 기판 위에 수직으로 정렬된 실리콘 옥사이드 나노기둥을 VLS 공정으로 성장시켰다. 성장된 실리콘 옥사이드 나노기둥의 형상과 결정학적 특성을 주사전자현미경 및 투과전자현미경으로 분석하였다. 그 결과 성장된 실리콘 옥사이드 나노기둥의 지름과 길이는 촉매 박막의 두께에 따라 변하였다. 실리콘 옥사이드 나노 기둥의 몸체는 비정질 상을 나타내었으며, Si과 O로 구성되어 있었다. 또한 성장된 실리콘 옥사이드 나노 기둥의 머리는 결정성을 나타내었으며, Si, O, Pt 및 Ti으로 구성되어 있었다. 실리콘 옥사이드 나노 기둥의 수직 정렬은 촉매물질인 Pt/Ti 합금의 결정성 정렬 선호에 기인하는 것으로 판단되며, 수직 성장된 실리콘 옥사이드 나노기둥은 기능성 나노소재로 활용이 가능할 것으로 기대된다.

• 한국산학기술학회논문지
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• 제19권9호
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• pp.536-542
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• 2018

이산화주석은 Rutile 구조를 갖는 Oxygen-Deficient n-type 반도체 물질로서, $H_2$, CO, $CO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 가지고 있고, 이러한 성질을 활용하면 다양한 가스의 감지가 가능하기 때문에 가스센서로 연구가 활발히 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체의 흡착이 유리하고, 가스 센서의 성능이 향상될 수 있다. 본 연구에서는 Thermal CVD 공정을 이용하여 SnO Nanoplatelet을 Si 기판위에 Dense하게 성장시켰다. 기상 수송 방법(Vapor Transport Method)으로 성장된 SnO 나노구조물을 Thermal CVD System을 이용하여 산소분위기에서 $830^{\circ}C$ 및 $1030^{\circ}C$에서 열처리(Post-Annealing)하여 $SnO_2$ 상(Phase)을 갖도록 하였다. 열처리 과정동안 쳄버의 압력을 4.2 Torr로 일정하게 유지시켰다. 열처리 된 SnO 나노구조물의 결정학적 특성을 Raman Spectroscopy 및 XRD 분석을 통하여 확인하였고, 형태학적 변화를 주사전사현미경(Scanning Electron Microscopy)을 통하여 확인하였다. 분석결과 SnO 나노구조물은 열처리 과정을 통하여 $SnO_2$ 나노구조물로 상변환 되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.2-314.2
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• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.