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http://dx.doi.org/10.5762/KAIS.2018.19.9.536

A Study on the Annealing Effect of SnO Nanostructures with High Surface Area  

Kim, Jong-Il (Department of Advanced Chemical Engineering, Mokwon University)
Kim, Ki-Chul (Department of Advanced Chemical Engineering, Mokwon University)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.19, no.9, 2018 , pp. 536-542 More about this Journal
Abstract
Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.
Keywords
tin oxide; annealing effect; nanostructure; vapor transport method; chemical vapor deposition;
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Times Cited By KSCI : 1  (Citation Analysis)
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