• 한국분말재료학회지
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• 제6권1호
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• 한국재료학회지
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• 제14권8호
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• pp.573-578
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• 2004

Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared $NiCoSi_x$ silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of $NiCoSi_x$ layers. We dry etched the photoresist/SiO/silicide/silicon patterns with $CF_4\;and\;CHF_3$ gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched $0\sim316{\AA}$ during over etch time of 3min, while silicon layers with proposed $NiCoSi_x$ silicide were not etched and showed stable surfaces. Our result implies that new $NiCoSi_x$ silicides may replace the conventional silicides due to contact etch process compatibility.

• 한국표면공학회지
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• 제47권6호
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• pp.354-361
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• 2014

In order to utilize silicon carbide (SiC) as an inner part of fluidized bed reactor (FBR) for manufacturing poly-silicon, we have carried out the thermodynamic calculation on the overall reactions including poly-silicon synthesis and compatibility of SiC with FBR process. The resources of silicon included $SiH_4(MS)$, $SiHCl_3(TCS)$ and $SiCl_4(STC)$ and the thermodynamic yield of the FBR with MS, TCS and STC were compared each other with variable range of temperature, pressure and hydrogen to silicon ratio. The silicon yield of MS, TCS and STC were 100%, 28% and 4%, respectively, throughout the conventional FBR conditions. Silicon carbide having high hardness and strength showed strong resistance to granule collisions during the FBR process using a lab-scale reactor. And it also showed quite good compatibility with the typical FBR processes of MS and TCS resources.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2001년도 춘계학술발표회요약집
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• pp.272.2-272
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.533-536
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• 2006

VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

• 한국응용과학기술학회지
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• 제32권4호
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• pp.718-723
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• 2015

For the fabrication of the Si negative electrode in Li-ion batteries (LIBs) containing the cross-linking polymer binder, in this work, the urethane acrylate (UA) oligomer was synthesized via a simple synthetic process. The cross-linked poly(urethane acrylate) (CPUA)/carbone black (CB)/Si composite (CPUA/CB/Si composite) was fabricated through reactions between their reactive vinyl segments in the UA oligomer. Interestingly, the CPUA/CB/Si composite showed better cycle performance than the poly(vinylidene fluoride) (PVdF)/CB/Si composite (PVdF/CB/Si composite) and the polyurethane (PU)/CB/Si composite (PU/CB/Si composite). The CPUA/CB/Si composite had the best lithiation of about $2586mAh\;g^{-1}$. The UA oligomer showed a good compatibility with the electrode materials and current collector after and before a curing process.

• IEIE Transactions on Smart Processing and Computing
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• 제3권5호
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.64.2-64.2
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• 2011

Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

• 한국진공학회지
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• 제15권3호
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• pp.273-279
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• 2006

Si기반 고주파집적회로의 차단재로서 간접전극 양극산화법으로 형성된 다공성 Si을 활용하기 위한 기초 연구로서 전류밀도, 시간에 따른 기공의 크기와 깊이등을 조사하였고 기공 도입 전,후 Si의 격자상수 변화를 측정하여 유발되는 내부응력의 크기를 평가하였다. 기공의 크기와 깊이는 대개 전류밀도와 시간에 따라 증가하였다. 기공이 형성됨에 따라 Si의 격자상수가 증가하여 약 8MPa의 압축응력이 유발되었다. 간접전극 양극산화법으로 형성된 다공성 Si은 공정이간단하고 기공으로 유발되는 내부응력의 크기가 작아 Si YLSI공정 적합성이 우수하므로 고주파 직접회로의 효과적인 차단재로서 적합한 재료로 판단된다.