Browse > Article

Formation of Porous Si by Indirect Electrode Anodization  

Kim, Soon-Kyu (Nano Device Research Center, Korea institute of Science & Technology)
Chang, Joon-Yeon (Nano Device Research Center, Korea institute of Science & Technology)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.3, 2006 , pp. 273-279 More about this Journal
Abstract
This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.
Keywords
Porous Si; Indirect electrode anodization; Isolation material; Lattice parameter;
Citations & Related Records
연도 인용수 순위
  • Reference
1 L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, and J. M. Keen, J. Appl. Phys. 70, 422 (1991)   DOI
2 H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida Nature 400, 853 (1999)   DOI   ScienceOn
3 A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997)   DOI   ScienceOn
4 V. Parhutik, Solid State Elec. 43, 1121 (1999)   DOI   ScienceOn
5 G. Davies, Phys. Rep. 176, 83 (1989)   DOI   ScienceOn
6 V. Lehmann and U. Gosele, Appl. Phys. lett. 58, 856 (1991)   DOI
7 K. B. Ashby, I. A. Koullias, W. C. Finley, J.,J. Bastek, and S. Moinian, IEEE J. Solid-State Circuits 32, 4 (1996)
8 J. N. Burghartz, D. C. Edelstein, K. A. Jenkins, and Y. H. Kwark, IEEE Trans. Microwave Theory Tech. 45, 1961 (1996)
9 H. S. Kim, E. C. Zouzounis, and Y.H. Xie, Appl. Phys. Lett. 80, 2287 (2002)   DOI   ScienceOn
10 R. L. Smith and S. D. Collins, J. Appl. Phys. 71, R1 (1992)   DOI
11 J. P. Raskin, A. Viviani, D. Flandre, and J. P. Colinge, IEEE Trans. Electron Devices 44, 2252 (1997)   DOI   ScienceOn
12 H. S. Kim, Y. H. Xie, M. DeVincentis, T. Itoh, and K. A. Jenkins, J. Appl. Phys. 93, 4226 (2003)   DOI   ScienceOn
13 C. M. Nam and Y. S. Kwon, IEEE Microwave Guid. Wave Lett. 7, 236 (1997)   DOI   ScienceOn
14 T. L. Lin and K. L. Wang, Appl. Phys. Lett. 49, 1104 (1986)   DOI