• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2009년도 추계학술대회
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• pp.187-201
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• 2009

Semiconductor industry is based on equipment industry and timing industry. In particular, semiconductor process is very complex and as semiconductor-chip width tails and is becoming equipment gradually more as a high technology. Equipment operation is primarily engaged in semiconductor manufacturing (engineers and operator) of being conducted by, equipment errors have also been raised. Equipment operational data related to the error of korea occupational safety and health agency were based on data and production engineers involved in the operator's questionnaire was drawn through the error factor. Equipment operating in the error factor of 9 big item and 36 detail item detailed argument based on the errors down, and 9 big item the equipment during operation of the correlation error factor was conducted. Each of the significance level was correlated with the tabulation and analysis. Using the maximum correlation coefficient, the correlation between the error factors to derive the relationship between factors were analyzed. Facility operating with the analysis of error factors (big and detail item) derive a relationship between the model saw. The end of the operation of the facility in operation on the part of the two factors appeared as prevention. Safety aspects and ergonomics aspects of the approach should be guided to the conclusion.

• 한국산업보건학회지
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• 제29권3호
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• pp.278-288
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• 2019

Objectives: The objectives of this study are to summary controversy over health risks among semiconductor workers, to review major cancer risk results conducted in semiconductor operation and to evaluate occupational health activities in Korea for controlling hazardous agents generated in semiconductor operations Methods: Major occupational health issues that has been social controversies among semiconductor workers since 2007 were reviewed through an extensive literature, report and article review. Results: Since a female semiconductor worker aged 22 died from leukemia in 2007, job-association of a number of former semiconductor workers with various types of cancer and rare diseases have been denied by the Korea Workers' Compensation and Welfare Service (KWCWS), but some of them were later awarded compensation as an occupational disease by the administrative court. Two epidemiologic cancer risk studies conducted in Korea found increased risks in leukemia and non-Hodgkin's lymphoma among semiconductor workers. Various legal occupational health activities taken in semiconductor industry were found to fail to assess a complex characteristics of semiconductor operations, such as drastic changes in chemical use, processes, and technology, multiple exposure. National compensation regulation also showed the limitation to evaluate job-association of semiconductor workers who had worked in semiconductor operation. Conclusions: National legal measures should be taken to improve several occupational health activities and duties for protecting workers. In addition, the KWCWS program should be revised so that all workers who meet minimal job or environment associations can be compensated.

• 센서학회지
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• 제30권5호
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• pp.295-299
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• 2021

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.111-124
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• 2002

The ferroelectric RAM (FeRAM) has a great advantage for a system on a chip (SOC) and mobile product memory, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM and SRAM. This work develops at three levels: 1) low voltage operation with boost voltage control of bitline and plateline, 2) reducing bitline capacitance with multiple divided sub cell array, and 3) increasing chip performance with write operation sharing both active and precharge time period. The key techniques are implemented on the proposed hierarchy bitline scheme with proposed hybrid-bitline and high voltage boost control. The test chip and simulation results show the performance of sub-1.5 voltage operation with single step pumping voltage and self-boost control in a cell array block of 1024 ($64{\;}{\times}{\;}16$) rows and 64 columns.

• 한국CDE학회논문집
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• 제19권4호
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• pp.402-409
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• 2014

Presented in this paper is a scheduling method for semiconductor backend process considering the backward pegging. It is known that the pegging for frontend is a process of labeling WIP lots for target order which is specified by due date, quantity, and product specifications including customer information. As a result, it gives the release plan to meet the out target considering current WIP. However, the semiconductor backend process includes the multichip package and test operation for the product bin portion. Therefore, backward pegging method for frontend can't give the release plan for backend process in semiconductor. In this paper, we suggest backward pegging method considering the characteristics of multichip package and test operation in backend process. And we describe the backward pegging problem using the examples.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.15-18
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• 2003

Pentacene OTFTs of $Al_2O_3$ insulator treated with a diluted PMMA were fabricated for the application of the low voltage operation and large area displays. The operation voltage of 15 V and the mobility of 0.35 $cm^2/Vsec$ are obtained even adopting the thick dielectric of 100 nm which was deposited by atomic layer deposition at the temperature of $150^{\circ}C$. The current on-off ratio was $4.1{\times}10^4$ for the OTFTs treated with 9:1 PMMA and good saturation characteristics were obtained as drain voltage increases.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• Industrial Engineering and Management Systems
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• 제4권1호
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• pp.47-53
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• 2005

The efficiency of fabrication (fab) operation is one of the key factors in order for a semiconductor manufacturing company to stay competitive. Optimization of manpower and forecasting manpower needs in a modern fab is an essential part of the future strategic planing and a very important to the operational efficiency. As the semiconductor manufacturing technology has entered the 8-inch wafer era, the complexity of fab operation increases with the increase of wafer size. The wafer handling method has evolved from manual mode in 6-inch wafer fab to semi-automated or fully automated factory in 8-inch and 12-inch wafer fab. The distribution of manpower requirement in each specialty varied as the trend of fab operation goes for downsizing manpower with automation and outsourcing maintenance work. This paper is to study the specialty distribution of manpower from the requirement in a typical 6-inch, 8-inch to 12-inch wafer fab. The human resource planning in today’s fab operation shall consider many factors, which include the stability of technical talents. This empirical study mainly focuses on the human resource planning, the manpower distribution of specialty structure and the forecast model of internal demand/supply in current semiconductor manufacturing company. Considering the market fluctuation with the demand of varied products and the advance in process technology, the study is to design a headcount forecast model based on current manpower planning for direct labour (DL) and indirect labour (IDL) in Taiwan’s fab. The model can be used to forecast the future manpower requirement on each specialty for the strategic planning of human resource to serve the development of the industry.

• Journal of the Optical Society of Korea
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• 제16권2호
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• pp.181-184
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• 2012

We report, for the first time, operation frequency dependence of current density-voltage ($J_{OLED}-V_{OLED}$) shift for multi-layer organic light-emitting diodes (OLEDs). When the OLEDs were electrically stressed for 21 hours with 50% duty voltage pulses at 60, 120, 240, and 360 Hz, the JOLED-VOLED shifts were suppressed by half for 360 Hz operation compared with 60 Hz operation, but with little change in emission efficiencies. This frequency dependent $J_{OLED}-V_{OLED}$ shift is believed to be commonly observed for typical multi-layer OLEDs and can be used to further improve lifetime of digitally-driven active-matrix OLED displays.