• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.9 s.339
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• pp.49-56
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• 2005

Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• Textile Coloration and Finishing
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• v.30 no.2
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• pp.63-69
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• 2018

In this study, we report on successful attempt towards the synthesis of sulfur self-doped $g-C_3N_4$ by directly heating thiourea in air. The synthesized materials were characterized using UV-vis spectral technique, FT-IR, XRD and TEM analysis. Further, the obtained material shows an excellent detection of carcinogenic TNP(Tri nitro phenol) in the presence of 10-fold excess of various other common interferences. The strong inner filter effect and molecular interactions(electrostatic, ${\pi}-{\pi}$, and hydrogen bonding interactions) between TNP and the $S-g-C_3N_4$ Nano sheets led to the fluorescence quenching of the $S-g-C_3N_4$ Nano sheets with an excellent selectivity and sensitivity towards TNP compared to that of other nitro aromatics under optimal conditions and the detection limit calculated was found to be 6.324 nM for TNP. The synthesized nanocomposite provides a promising platform for the development of sensors with improved reproducibility and stability for ultra-sensitive and selective sensing of TNP.

• ETRI Journal
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• v.39 no.2
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• pp.292-299
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• 2017

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.11
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• pp.832-840
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• 2008

Ablation occurs at irradiance beyond $10^9\;W/cm^2$ with nanosecond and short laser pulses focused onto any materials. Phenomenologically, the surface temperature is instantaneously heated past its vaporization temperature. Before the surface layer is able to vaporize, underlying material will reach its vaporization temperature. Temperature and pressure of the underlying material are raised beyond their critical values, causing the surface to explode. The pressure over the irradiated surface from the recoil of vaporized material can be as high as $10^5\;MPa$. The interaction of high power nanosecond laser with a thin metal in air has been investigated. The nanosecond pulse laser beam in atmosphere generates intensive explosions of the materials. The explosive ejection of materials make the surrounding gas compressed, which form a shock wave that travels at several thousand meters per second. To understand the laser ablation mechanism including the heating and ionization of the metal after lasing, the temporal evolution of shock waves is captured on an ICCD camera through laser flash shadowgraphy. The expansion of shock wave in atmosphere was found to agree with the Sedov's self-similar spherical blast wave solution.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.341-348
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• 2009

Various types of micro cone penetrometers have been developed by using strain gages for the layered soil detection. Strain gages, however, are affected by several factors such as temperature, self heating and lead wire length. In this study, micro cone penetrometers with 3~7mm in diameter, are developed by using FBG sensor to overcome the defects of the strain gage, and compensate the effect of temperature during penetration. In order to verifiy the accuracy and reliability of the developed FBG cone, the cone penetration test is performed on the layered soil. The tip resistance of FBG snesor shows excellent sensitivity, and can detect the interface of the layered soils with higher resolution. In addition, the 3mm micro cone penetrometer which is impossible cone diameter by using strain gages presents much higher sensitivity than the 7mm cone penetrometer. This study suggests that FBG sensor is a useful sensor for manufaturing the ultra small sized cone, and effectively detects the interface of the layered soil.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.39-48
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• 2016

In this paper, we propose thermal resistance compact model of FinFET structure that has hexagon shaped source/drain. The heating effect and thermal properties were increased by reduced size of the device, and thermal resistance is an important factor to analyze the effect and the properties. The heat source and each contact that is moved heat out were set up in transistor, and domain is divided by the heat source and the four parts of contacts : source, drain, gate, substrate. Each contact thermal resistance model is subdivided as a easily interpretable structure by analyzing the temperature and heat flow of the TCAD simulation results. The domains are modeled based on an integration or conformal mapping method through the structure parameters according to its structure. First modeled by analyzing the thermal resistance to a single fin, and applying the change in the parameter of the channel increases to improve the accuracy of the thermal resistance model of the multi-fin/ finger. The proposed thermal resistance model was compared to the thermal resistance by analyzing results of the 3D Technology CAD simulations, and the proposed total thermal resistance model has an error of 3 % less in single and multi-finl. The proposed thermal resistance model can predict the thermal resistance due to the increase of the fin / finger, and the circuit characteristics can be improved by calculating the self-heating effect and thermal characterization.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.121-129
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• 2012

RF biased inductively coupled plasma (ICP) is widely used in semiconductor and display etch processes which are based on vacuum science. Up to now, researches on how rf-bias power affects have been focused on the controls of dc self-bias voltages. But, effect of RF bias on plasma parameters which give a crucial role in the processing result and device performance has been little studied. In this work, we studied the correlation between the RF bias and plasma parameters and the recent published results were included in this paper. Plasma density was changed with the RF bias power and this variation can be explained by simple global model. As the RF bias was applied to the ICP, increase in the electron temperature from the electron energy distribution was measured indicating electron heating. Plasma density uniformity was enhanced with the RF bias power. This study can be helpful for the control of the optimum discharge condition, as well as the basic understanding for correlation between the RF bias and plasma parameters.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.