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http://dx.doi.org/10.5573/ieie.2016.53.8.039

Analysis and modeling of thermal resistance of multi fin/finger FinFETs  

Jang, MoonYong (College of Information and Communication Engineering, Sungkyunkwan University)
Kim, SoYoung (College of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.53, no.8, 2016 , pp. 39-48 More about this Journal
Abstract
In this paper, we propose thermal resistance compact model of FinFET structure that has hexagon shaped source/drain. The heating effect and thermal properties were increased by reduced size of the device, and thermal resistance is an important factor to analyze the effect and the properties. The heat source and each contact that is moved heat out were set up in transistor, and domain is divided by the heat source and the four parts of contacts : source, drain, gate, substrate. Each contact thermal resistance model is subdivided as a easily interpretable structure by analyzing the temperature and heat flow of the TCAD simulation results. The domains are modeled based on an integration or conformal mapping method through the structure parameters according to its structure. First modeled by analyzing the thermal resistance to a single fin, and applying the change in the parameter of the channel increases to improve the accuracy of the thermal resistance model of the multi-fin/ finger. The proposed thermal resistance model was compared to the thermal resistance by analyzing results of the 3D Technology CAD simulations, and the proposed total thermal resistance model has an error of 3 % less in single and multi-finl. The proposed thermal resistance model can predict the thermal resistance due to the increase of the fin / finger, and the circuit characteristics can be improved by calculating the self-heating effect and thermal characterization.
Keywords
Thermal Resistance; FinFET; modeling;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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