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http://dx.doi.org/10.4218/etrij.17.0116.0385

Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET  

Kim, Minki (ICT Materials & Components Research Laboratory, ETRI)
Park, Youngrak (ICT Materials & Components Research Laboratory, ETRI)
Park, Junbo (ICT Materials & Components Research Laboratory, ETRI)
Jung, Dong Yun (ICT Materials & Components Research Laboratory, ETRI)
Jun, Chi-Hoon (ICT Materials & Components Research Laboratory, ETRI)
Ko, Sang Choon (ICT Materials & Components Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.39, no.2, 2017 , pp. 292-299 More about this Journal
Abstract
We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.
Keywords
GaN-FET; Dynamic resistance;
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