• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.99-101
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• 2000

The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.77-82
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• 2000

A surface of polytetrafluoroethylene(PTFE) was modified with changing ion doses by 1 keV $Ar^+$ ion irradiation and Cu films having thickness $5000\;{\AA}$ were deposited on the modified PTFE. The SEM study showed that the surface texture of modified PTFE was in the form of cones whose height increased depending on ion doses. Through XPS spectra, it was found that the intensity of F ls peaks decreased with ion doses by preferential sputtering of F atoms and the C-C and / or C-F chains were formed by the crosslinking in the newly unstable chains. Cu films were deposited uniformly along the filaments formed on the modified PTFE. In x-ray diffraction (XRD) spectra of deposited Cu films on modified PTFE, a preferred orientation along (111) and (200) planes was found and the peak intensity of (111) plane increased as surface roughness of modified PTFE increased. The resistivity of Cu films was changed from $2.7{\mu}{\Omega}cm$ of unmodified PTFE to $4.3{\mu}{\Omega}cm$ of modified PTFE at ion dose of $1{\times}10^{16}/\textrm{cm}^2$ and the abrupt increase of resistivity in the modified PTFE at ion dose of $1{\times}10^{17}/\textrm{cm}^2$ was due to being cut off the film which resulted from the increased surface roughness.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.182-182
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• 2016

철강은 기본적으로 강도가 우수하고 그 매장량이 풍부할 뿐만 아니라 대량생산이 가능하다 또한 다른 금속과 합금을 구성하여 또 다른 특성을 부여할 수 있기 때문에 현재 전 세계 금속 생산량의 95%를 차지할 정도로 많이 사용되며, 각종 산업과 기술이 발달함에 따라 그 중요도는 점점 더 커져가고 있다. 하지만 철강은 사용 환경 중 부식에 의해 그 수명과 성능이 급격히 저하되기 때문에 내식성을 향상시키기 위하여 도장이나 도금 등의 표면처리를 포함한 다양한 방법이 적용되고 있다. 그 중 철강재의 도금 표면처리방법은 주로 아연을 이용한 용융도금이나 전기도금 등과 같은 습식 프로세스가 널리 사용되고 있다. 여기서 아연은 철보다 이온화 경향은 크나 대기 환경 중 산소와 물과 반응하여 Zn(OH)2와 같은 화합물을 형성함으로써 철강재 표면상 부식인자를 차단(Barrier)함은 물론 사용 중 철 모재가 노출되는 결함이 발생하는 경우에는 철을 대신하여 희생양극(Sacrificial Anode) 역할을 하기 때문에 철의 부식방식용 금속으로 가장 많이 사용되고 있다. 한편 최근에는 철강의 사용 환경이 다양해짐은 물론 가혹해지고 있어서 이에 따른 내식성 향상이 계속해서 요구되고 있는 추세이다. 따라서 본 연구에서는 철강재의 내식성을 향상시키기 위한 일환으로 현재 많이 사용되고 있는 용융아연도금 강판 상에 아연보다 활성이 높은 마그네슘(Mg)을 건식 프로세스 방법 중에 하나인 PVD(Physical Vapour Deposition)법에 의해 코팅하는 것을 시도하였다. 일반적으로 PVD법에 의해 진공증착하는 경우에는 그 도입가스로써 불활성가스인 아르곤(Ar)을 사용하는 경우가 대부분이나 여기서는 상대적으로 비활성이면서 그 크기가 작은 질소(N2)가스를 도입하여 그 증착 막의 몰포로지는 물론 결정구조도 제어하여 그 내식특성을 향상시키고자 하였다. 본 연구에서는 철강재의 내식성을 향상시키기 위한 방법으로 마그네슘(Mg)를 PVD(Physical Vapor Deposition)법 중 진공증착법(Vacuum Deposition)을 사용하여 용융아연도금 강판 상에 마그네슘 증착 막을 형성하였다. 즉, 여기서는 진공증착 중 질소(Nitrogen, N2)가스를 도입하여 진공챔버(Vacuum Chamber)내의 진공도를 $1{\times}10^{-1}$, $1{\times}10^{-2}$, $1{\times}10^{-3}$, $1{\times}10^{-4}$로 조절하며 제작하였다. 또한 제작된 시편에 대해서는 SEM(Scanning Electron Microscope) 및 XRD(X-Ray Diffraction)을 사용하여 형성된 아연도금상 마그네슘 막의 표면 몰포로지 및 결정구조의 변화를 분석함은 물론 침지시험, 염수분무시험, 분극시험을 통해 이 막들에 대한 내식특성을 분석 평가하였다. 상기 실험결과에 의하면, 진공 가스압이 증가됨에 따라 마그네슘 막의 두께는 감소하였으며, 그 몰포로지의 단면은 주상정(Columnar)에서 입상정(Granular) 구조로 변화하며 표면의 결정립은 점점 미세화 되는 경향을 나타냈다. 이때의 표면의 결정배향성(Crystal orientation)은 표면에너지가 상대적으로 큰 면이 우세하게 나타나는 경향이 있었다. 또한 본 실험에서 형성한 진공증착 막은 비교재인 용융아연도금강판보다 우수한 내식성을 나타냈고, 본 형성 막 중에는 마그네슘 막 두께가 작음에도 불구하고 질소 가스압이 가장 큰 조건일수록 내식성이 우수한 경향을 나타냈다. 이상의 결과는 철강재의 내식성 향상을 위한 응용표면처리설계에 기초적인 지침을 제공할 수 있을 것으로 기대된다.

• The Journal of the Convergence on Culture Technology
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• v.9 no.1
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• pp.539-544
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• 2023

The subject of this study is the Maae Buddha statue in granodiorite of the Mesozoic Cretaceous period, which is concerned about stability as a standing stone cultural property located in ◯◯-dong, Gyeongsangbuk-do. For stability analysis, three-dimensional face mapping, geological properties of joints, three-dimensional scanning, ultrasonic velocity, polarization microscopy, electron microscopy analysis and XRD analysis were performed. In addition, the safety factor of the Maaebul was calculated by analyzing the damage status investigation, stereographic projection analysis, rock classification, and limit equilibrium analysis. The types and scales of damage and possible collapse by section depend on the degree of weathering of the rock and the orientation and characteristics of the joints, but wedge-failure and toppling-failure are expected to be small-scale. The safety factor of Maaebul in dry and wet conditions is less than 1.2, so stability is concerned. The types of damage were mainly observed, such as exfoliation, cracking, granular decomposition, and vegetation growth. The Maaebul rock is granodiorite, and the surface discoloration materials are K, Fe, and Mg. The 4 sets of joints are developed, J1 is tensile joint and the others are shear joint. The uniaxial compressive strength estimated by ultrasonic exploration is 514kgf/cm2, which corresponds to most soft rocks and some weathered rocks. Rock classification(RMR) is estimated to be grade 5, very poor rock mass. These technique along with the existing methods of safety diagnosis of cultural properties are expected to be a reasonable tool for objective interpretation and stability review of stone cultural properties.

• Journal of Soil and Groundwater Environment
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• v.9 no.1
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• pp.79-86
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• 2004

Hydraulic conductivity along rock fracture is mainly dependent on fracture geometries such as orientation, aperture, roughness and connectivity. Therefore, it needs to consider fracture geometries sufficiently on a fracture model for a numerical analysis to calculate permeability coefficient in a fracture. This study performed new type of numerical analysis using a homogenization analysis method to calculate permeability coefficient accurately along single fractures with several fracture models that were considered fracture geometries as much as possible. First of all, fracture roughness and aperture variation due to normal stress applied on a fracture were directly measured under a confocal laser scaning microscope (CLSM). The acquired geometric data were used as input data to construct fracture models for the homogenization analysis (HA). Using the constructed fracture models, the homogenization analysis method can compute permeability coefficient with consideration of material properties both in microscale and in macroscale. The HA is a new type of perturbation theory developed to characterize the behavior of a micro inhomogeneous material with a periodic microstructure. It calculates micro scale permeability coefficient at homogeneous microscale, and then, computes a homogenized permeability coefficient (C-permeability coefficient) at macro scale. Therefore, it is possible to analyze accurate characteristics of permeability reflected with local effect of facture geometry. Several computations of the HA were conducted to prove validity of the HA results compared with the empirical equations of permeability in the previous studies using the constructed 2-D fracture models. The model can be classified into a parallel plate model that has fracture roughness and identical aperture along a fracture. According to the computation results, the conventional C-permeability coefficients have values in the range of the same order or difference of one order from the permeability coefficients calculated by an empirical equation. It means that the HA result is valid to calculate permeability coefficient along a fracture. However, it should be noted that C-permeability coefficient is more accurate result than the preexisting equations of permeability calculation, because the HA considers permeability characteristics of locally inhomogeneous fracture geometries and material properties both in microscale and macroscale.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.508-516
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• 2010

An autonomous and automatic home mess-cleanup robot is newly developed in this paper. Thus far, vacuum-cleaners have lightened the burden of household chores but the operational labor that vacuum-cleaners entail has been very severe. Recently, a cleaning robot was commercialized to solve but it also was not successful because it still had the problem of mess-cleanup, which pertained to the clean-up of large trash and the arrangement of newspapers, clothes, etc. Hence, we develop a new home mess-cleanup robot (McBot) to completely overcome this problem. The robot needs the capability for agile navigation and a novel manipulation system for mess-cleanup. The autonomous navigational system has to be controlled for the full scanning of the living room and for the precise tracking of the desired path. It must be also be able to recognize the absolute position and orientation of itself and to distinguish the messed object that is to be cleaned up from obstacles that should merely be avoided. The manipulator, which is not needed in a vacuum-cleaning robot, has the functions of distinguishing the large trash that is to be cleaned from the messed objects that are to be arranged. It needs to use its discretion with regard to the form of the messed objects and to properly carry these objects to the destination. In particular, in this paper, we describe our approach for achieving accurate localization using RFID for home mess-cleanup robots. Finally, the effectiveness of the developed McBot is confirmed through live tests of the mess-cleanup task.