• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1532-1535
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• 1987

In this paper, we propose the algorithm for mask level simulation. The circuit parameters were extracted from the photomask data in format of bitmap. The extracted circuit parameter was transformed into the input file format of SPICE-16. And then the simulation of mask pattern data was carried out the SPICE-16. Thus the error operation of IC due to the mistake of photomask pattern could be prevented.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.8
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• pp.1260-1264
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• 1990

A voltage controlled CMOS operational transconductance amplifier (OTA), whose transconductance is directly proportional to the DC bias voltage, has been designed for many electronic circuit applications. It consists of a differential pair and three ourrent mirrors. The SPICE simulation shows that the conversion sensitivity of the OTA is 41.817 \ulcornerho/V and the linearity error is less than 0.402% over a bias voltage range from -2. OV to 1. OV. Electrically tunalble filters based on voltage controlled impedances, which are realized with OTA's, also have been designed. The SPICE simulation shows that a second-order bandpass filter, whose center frequency is 23KHz at -1. OV, has the conversion sensitivity 6.6KHz/V and the linearity error less than 0.822% over a voltage range from -2.OV tp 1.OV, Tne OTA has been laid out with the 3\ulcorner n-well CMOS design rule adopted in ISRC (inter-university semiconductor research center). The chip size was about $0.756x0.945mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.594-607
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• 2013

A new efficient analytical eye-diagram determination technique for coupled interconnect lines is presented. Two coupled lines are decoupled into isolated eigen modes; bit blocks for coupled lines, which are defined as a block of consecutive bits, are then represented with decoupled modes. The crosstalk effects within the bit blocks are taken into account. Thereby, the crucial input bit patterns for the worst case eye-diagram determination are modeled mathematically, including inter-symbol interference (ISI). The proposed technique shows excellent agreement with the SPICE-based simulation. Furthermore, it is very computation-time-efficient in the order of magnitude, compared with the SPICE simulation, which requires numerous pseudo-random bit sequence (PRBS) input signals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.13-17
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• 2013

In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um ${\times}$ 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.82-82
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• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.91-98
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• 2004

This paper proposes a PCB plane model for generic SPICE circuit simulators. The proposed model reflects two frequency-dependent losses, namely skin and dielectric losses. After power/ground plane pair is divided into arrays of unit-cells, each unit-cell is modeled using a transmission line and two loss models. The loss model is composed of a resistor for DC loss, series HL ladder circuit for skin loss and series RC ladder circuit for dielectric loss. To verify the validity of the proposed model, it is compared with SPICE ac analysis using frequency-dependent resistors. Also, we show that the estimation results using the proposed model have a good correlation with that of VNA measurement for the typical PCB stack-up structure of general desktop PCs. With the proposed model, not only ac analysis but also transient analysis can be easily done for circuits including various non-linear/linear devices since the model consists of passive elements onl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.145-150
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• 1998

8$\times$8 bit scaled SONOSFET NAND type flash EEPROM that shows better characteristics on cell density and endurance than NOR type have been designed and its electrical characteristics are verified with computer aided simulation. For the simulation, the spice model parameter was extracted from the sealed down SONOSFET that was fabricated by $1.5mutextrm{m}$ topological design rule. To improve the endurance of the device, the EEPROM design to have modified Fowler-Nordheim tunneling through the whole channel area in Write/Erase operation. As a result, it operates Write/Erase operation at low current, and has been proven Its good endurance. The NAND type flash EEPROM, which has upper limit of V$_{th}$, has the upper limit of V$_{th}$ as 4.5V. It is better than that of floating gate as 4V. And a EEPROM using the SONOSFET without scaling (65$\AA$-l65$\AA$-35$\AA$), was also designed and its characteristics have been compared. It has more possibliity of error from the V$_{th}$ upper limit as 4V, and takes more time for Read operation due to low current. As a consequence, it is proven that scaled down SONOSFET is more pertinent than existing floating gate or SONOSFET without scaling for the NAND type flash EEPROM.EPROM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4159-4164
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• 2012

This paper presents a chaotic circuit with voltage controllability for secure communication applications. The proposed circuit which has two control voltages consists of the nonlinear function block(NFB) with three MOS transistors, one source follower and non-overlapping two-phase clock generator for sample and hold. By SPICE simulation, chaotic dynamics such as time waveform, frequency analysis and bifurcations were analyzed. SPICE results showed that proposed circuit can make various chaotic signals by control voltage.