• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.206-215
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• 1994

A method for simulating general characteristics and temperature characteristics of discharging SCR of the capacitor discharge impulse magnetizer-magnetizing fixture system using SPICE is presented. This method has been developed which can aid the design, understanding and inexpensive, time-saving of magnetizing circuit. As the detailed characteristic of magnetizing circuit can be obtained, the efficient design of the magntizing circuit which produce desired magnet will be possible using our SPICE modeling. Especially, computation of the temperature rise of discharging SCR is very important since it gives some indication of thermal characteristic of discharging circuit. It is implemented on a 486 personal computer, and the modeling results are checked against experimental measures. The experimental results have been achived using 305[V] and 607[V] charging voltage, low-energy capacitor discharge impulse magnetizer-magnetizing fixture of air cleaner DC motor.

• 전자공학회논문지 IE
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• v.46 no.4
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• pp.8-15
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• 2009

In this paper, we are indicated CMOS Image sensor circuit SPICE analysis for the Photo Diode and pixel Modeling. We get a characteristic of the photoelectric current using a device simulator Medici and develop the Photodiode model for applying a SPICE simulation. For verifying the result, We compared the result of SPICE simulation with the result of mixed mode simulation about the testing circuit structure consisted photodiode and NMOS.

• Journal of information and communication convergence engineering
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• v.14 no.2
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• pp.115-121
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• 2016

Currently there is a lack of literature on SPICE-level models of double-gate (DG) tunnel field-effect transistors (TFETs). A DG TFET compact model is presented in this work that is used to develop a SPICE model for DG TFETs implemented with Verilog-A language. The compact modeling approach presented in this work integrates several issues in previously published compact models including ambiguity about the use of tunneling parameters A_k and B_k, and the use of a universal equation for calculating the surface potential of DG TFETs in all regimes of operation to deliver a general SPICE modeling procedure for DG TFETs. The SPICE model of DG TFET captures the drain current-gate voltage (I_ds-V_gs) characteristics of DG TFET reasonably well and offers a definite computational advantage over TCAD. The general SPICE modeling procedure presented here could be used to develop SPICE models for any combination of structural parameters of DG TFETs.

• Journal of IKEEE
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• v.25 no.4
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• pp.778-781
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• 2021

In this paper, we propose the 16-layer 3D NAND Flash memory compact modeling using SPICE. In the same structure and simulation conditions, the channel potential about Down Coupling Phenomenon(DCP) and Natural Local Self Boosting (NLSB) were simulated and analyzed with Technology Computer Aided Design(TCAD) tool Atlas(Silvaco^TM) and SPICE, respectively. As a result, it was confirmed that the channel potential of TCAD and SPICE for the two phenomena were almost same. The SPICE can be checked the device structure intuitively by using netlist. Also, its simulation time is shorter than TCAD. Therefore, using SPICE can be expected to efficient research on 3D NAND Flash memory.

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.417-427
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• 1993

액체질소하에서의 물리적인 현상 및 실험결과를 통하여 캐리어 냉동현상, 좁은 폭 및 숏트 채널효과를 포함한 문턱전압 모델, Surface Roughness Scattering 및 Ioniaed Impurity Scattering을 포함한 이동도 모델과 적합한 기판 전류모델이 제안되었으며 이 모델들은 모의실험 프로그램인 BSIM과 SPICE에 이식되었다. 제작된 링 오실레이터와 리플 가산기에 적용한 결과 측정한 데이타와 잘 부합되었다.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.270-274
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• 2011

This paper presents a parameterized simulation program with integrated circuit emphasis (SPICE) model of a two-level microbolometer based on negative-temperature-coefficient thin films, such as vanadium oxide or amorphous silicon. The proposed modeling begins from the electric-thermal analogy and is realized on the SPICE modeling environment. The model consists of parametric components whose parameters are material properties and physical dimensions, and can be used for the fast design study, as well as for the co-design with the readout integrated circuit. The developed model was verified by comparing the obtained results with those from finite element method simulations for three design cases. The thermal conductance and the thermal capacity, key performance parameters of a microbolometer, showed the average difference of only 4.77% and 8.65%, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.381-387
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• 1994

In this paper, we found the improved SPICE heat transfer modeling of impulsed magnetizing fixture system and investigated temperature characteristics using the proposed model. As the detailed thermal characteristics of magnetizing fixture can be obtained, the efficient design of the impulsed magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important of forecast the characteristics of the magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits under different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The purpose of this work is to compute the temperature increasing for different magnetizing conditions. The method uses multi-lumped model with equivalent thermal resistance and thermal capacitance. The reliable results are obtained by using iron core fixture (stator magnet of air cleaner DC motor) coupled to a low-voltage magnetizer(charging voltage : 1000[V], capacitor : 3825[$\mu$F]. The modeling and experimental results are in close aggrement.

• Journal of Sensor Science and Technology
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• v.22 no.1
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• pp.44-48
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• 2013

For a successful commercialization of microbolometer, it is required to develop a robust package including thermal stabilizing mechanism. In order to regulate the temperature within some operating range, thermoelectric cooler is generally used but it's not easy to model the whole package due to the coupled physics nature of thermoelectric cooler. In this paper, SPICE-compatible modeling methodology of a microbolometer package is presented, whose steady-state results matched well with FEM results at the maximum difference of 5.95%. Although the time constant difference was considerable as 15.7%, it can be offset by the quite short simulation time compared to FEM simulation. The developed model was also proven to be useful for designing the thermal stabilizer through parametric and transient analyses under the various working conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.92-97
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• 2013

In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.24-29
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• 2009

In order to model the high temperature dependence of the cutoff frequency $f_T$ in $0.18{\mu}m$ deep n-well isolated bulk NMOSFET, high temperature data of electron velocity of bulk MOSFETs from $30^{\circ}C$ to $250^{\circ}C$ are obtained by an accurate RF extraction method using measured S-parameters. From these data, an improved temperature-dependent electron velocity equation is developed and implemented in a BSIM3v3 SPICE model to eliminate modeling error of a conventional one in the high temperature range. Better agreement with measured $f_T$ data from $30^{\circ}C$ to $250^{\circ}C$ are achieved by using the SPICE model with the improved equation rather than the conventional one, verifying its accuracy of the improved one.