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http://dx.doi.org/10.4313/JKEM.2013.26.2.92

Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors  

Jung, Taeho (Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.2, 2013 , pp. 92-97 More about this Journal
Abstract
In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.
Keywords
OTFT; Threshold voltage shift; Modeling; Simulation;
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