• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.48-50
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• 2008

Solid phase crystallization (SPC) of amorphous silicon is usually conducted at around $600^{\circ}C$ since it is used in the application of flat panel display using thermally susceptible glass substrate. In this study we conducted SPC experiments at temperatures higher than $600^{\circ}C$ using silicon wafers. Crystallization rate becomes dramatically rapid at higher temperatures since SPC kinetics is controlled by nucleation with high value of activation energy. We report SPC kinetics of high temperatures compared to that of low temperatures.

• Proceedings of the Safety Management and Science Conference
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• 2002.05a
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• pp.81-89
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• 2002

EPC seeks to minimize variability by transferring the output variable to a related process input(controllable) variable, while SPC seeks to reduce variability by detecting and eliminating assignable causes of variation. In the case of product control, a very reasonable objective is to try to minimize the variance of the output deviations from the target or set point. We consider an alternative EPC model with second-order autoregressive disturbance. We compare three control systems； EPC, EPC combined with EWMA, and Shewhart. This paper shows through simulation that the performance of the integrated model of EPC and SPC is more preferable than that of EPC.

• Proceedings of the Korea Concrete Institute Conference
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• 1992.04a
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• pp.1-6
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• 1992

The objective of this report is to investigate and analyze the influnce of the different base concrete in consistency for the good production of superplasticized concrete (SPC) on the basis of the experimental results. The principal conclusions are summarized as follows. 1. SPC exhibited only slight bleeding in both cases of low and medium consistency of the base concrete, compared to the conventional concrete, compared to the coventional concrete. 2. SPC lost slump and flow value at a much faster rate than the conventional concrete with an equivalent water/cement ratio and initial consistency. 3. The compressive strength of SPC was fount to be higher than that of base and conventional concrete, and the case of base concrete with medium consistency showed a little more incretment than low consistency

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2005.04a
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• pp.206-209
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• 2005

본 논문에서는 국내에서 상용화되고 있는 삼성전자의 SPC-10의 IEC1131-3 표준 언어(LD, SFC, FBD, ST)가 상호 호환성을 갖도록 목적 언어인 IL로 변환하여 컴파일 될 수 있는 IL 컴파일러를 개발하고자 한다. 개발하려는 IL 컴파일러는 IL언어의 활용성을 매우 높여주며, 실제네트워크 디바이스에 다운로드 하여 사용할 수 있는 IL 언어를 생성하고 실행시키는 점이 특징이다. 이 시스템은 SPC-10에서 많이 사용되는 언어를 패턴인식에 의해 클러스터링하여 자동적으로 IL 언어로 변환이 되며, 컴파일에 의해 PLC 프로그램의 동작이 가능하다. 이 시스템에서는 또한 사용자가 발생할 수 있는 문법오류는 물론 논리오류를 지능적 에이전트에 의해 검색하여 수정함으로써 최적화된 환경에서 PC 기반 제어가 가능하도록 해준다.

• Proceedings of the Safety Management and Science Conference
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• 2003.05a
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• pp.277-283
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• 2003

EPC seeks to minimize variability by transferring the output variable to a related process input(controllable) variable, while SPC seeks to reduce variability by detecting and eliminating assignable causes of variation. Tn the case of product control, a very reasonable objective is to try to minimize the variance of the output deviations from the target or set point. We consider an alternative EPC model with second-order autoregressed disturbance. We compare three control systems; EPC, EPC combined system with EWMA, CUSUM and Shewhart. This paper shows through simulation that the performance of the integrated model of EPC and SPC is more preferable than that of EPC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.644-646
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• 2014

• The Plant Pathology Journal
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• v.30 no.4
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• pp.367-374
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• 2014

Genomes contain a large number of unique genes which have not been found in other species. Although the origin of such "orphan" genes remains unclear, they are thought to be involved in species-specific adaptive processes. Here, we analyzed seven orphan genes (MoSPC1 to MoSPC7) prioritized based on in planta expressed sequence tag data in the rice blast fungus, Magnaporthe oryzae. Expression analysis using qRT-PCR confirmed the expression of four genes (MoSPC1, MoSPC2, MoSPC3 and MoSPC7) during plant infection. However, individual deletion mutants of these four genes did not differ from the wild-type strain for all phenotypes examined, including pathogenicity. The length, GC contents, codon adaptation index and expression during mycelial growth of the four genes suggest that these genes formed during the evolutionary history of M. oryzae. Synteny analyses using closely related fungal species corroborated the notion that these genes evolved de novo in the M. oryzae genome. In this report, we discuss our inability to detect phenotypic changes in the four deletion mutants. Based on these results, the four orphan genes may be products of de novo gene birth processes, and their adaptive potential is in the course of being tested for retention or extinction through natural selection.

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.24-28
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• 2005

A typical method for obtaining poly-Si films is the solid phase crystallization(SPC) of amorphous Si. Advantages of SPC are uniformity, process quality and low cost of production. However, high process temperature and long process time prevent the employment of SPC process on thermally susceptible glass substrate. In this parer, we propose a new method that applies an alternating magnetic field during crystallization annealing in an alternating magnetic field crystallization(AMFC) system for lowering process temperature and shorter process time of SPC. When we crystallized, in the case of SPC, annealing time is 24 hours at 570℃. But in the case of AMFC, annealing time is only 20 minutes at the same temperature.