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Crystallization characteristics of the amorphous Si thin films in the AMFC system  

Kang Ku Hyun (Hong-Ik Univ. Dept of Materials Science and Engineering)
Lee Seung Jae (Hong-Ik Univ. Dept of Materials Science and Engineering)
Kim Sun Ho (Hong-Ik Univ. Dept of Materials Science and Engineering)
Lee Sue Kyeong (Hong-Ik Univ. Dept of Materials Science and Engineering)
Nam Seung Eui (Hong-Ik Univ. Dept of Materials Science and Engineering)
Kim Hyoung June (Hong-Ik Univ. Dept of Materials Science and Engineering)
Publication Information
Journal of the Korean Vacuum Society / v.14, no.1, 2005 , pp. 24-28 More about this Journal
Abstract
A typical method for obtaining poly-Si films is the solid phase crystallization(SPC) of amorphous Si. Advantages of SPC are uniformity, process quality and low cost of production. However, high process temperature and long process time prevent the employment of SPC process on thermally susceptible glass substrate. In this parer, we propose a new method that applies an alternating magnetic field during crystallization annealing in an alternating magnetic field crystallization(AMFC) system for lowering process temperature and shorter process time of SPC. When we crystallized, in the case of SPC, annealing time is 24 hours at 570℃. But in the case of AMFC, annealing time is only 20 minutes at the same temperature.
Keywords
Alternating Magnetic Field Crystallization; a-Si; poly-Si;
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