• Journal of the Korean Society of Food Science and Nutrition
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• v.25 no.2
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• pp.232-239
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• 1996

돌연변이 유발 물질인 mitomycin C(MMC)를 처리하여 배양한 Chinese hamster ovary(CHO) cell에 대한 감잎차 추출액의 항돌연변이 효과를 자매 염색 분체 교환(sister chromatid exchange, SCE) 시험법을 사용하여 측정하여 보았다. 감잎차 추출액 자체는 CHO 세포의 SCE 빈도수를 변화시키지 않았으며, 세포의 분열 주기중 S phase에 S9 mixture 없이 감잎차 추출액이 처리되었을 경우 MMC로 유도된 SCE 빈도수를 감소시키지 않았다. 그러나 S9 mixture 존재하에 $G_{1}$ phase에서 MMC 처리 후 감잎차를 처리하는 후처리 방식으로 감잎차 추출액을 처리하였을 때, 저농도($\leq$40$\mu\textrm{g}$/ml)에서 MMC로 인해 유발된 SCE 빈도수가 낮아지는 것을 볼 수 있었다. 이에 비해 고농도(>40$\mu\textrm{g}$/ml)에서는 SCE 빈도수의 감소 효과가 없었다. 본 연구결과, MMC 처리된 CHO 세포에 대한 감잎차 추출액의 항돌연변이 효과를 볼 수 있었고, 이 효과는 S9 mixture 존재하에서 저농도의 감잎차 추출액이 $G_{1}$ phase에 처리되었을 때 나타났다. 감잎차 추출액의 이러한 항돌연변이의 효과의 기전은 감잎차 추출액의 대사산물이 MMC 처리된 CHO 세포에 대한 DNA-excision repair activity를 촉진시키기 때문인 것으로 생각된다.

• Journal of Nutrition and Health
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• v.26 no.3
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• pp.313-324
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• 1993

Sister chromatid exchange(SCE) has recently become a common cytogenic assay system for detecting exposure to chemical mutagens and carcinogens. One application of SCE is the monitoring of populations believed to be exposed to such agents. A cross-sectional study of SCE frequency in peripheral blood lymphocytes from 40 college students aged 18 to 26 years was conducted. The effects of cigarette smoking alcohol and coffee consumption, dietary and environmental factors on SCE were assessed. A mean spontaneous SCE per cell for the smokers(4.88$\pm$0.17). The SCE levels of the smokers were associated with the personal smoking amount ; the observed increase in the SCE frequency correlated with the number of cigarettes smoked per day (P<0.05). There was no effect of age on SCE. There were positive linear relationship between SCE and food frequency score of meat and fish group (P<0.05) or instant food group(P<0.01) in non-smokers. But in smokers, a significant inverse association between SCE and food frequency score of green and yellow vegetable group(P<0.05). Alcohol intake produced a significant increase(P<0.01) of SCE in comparison with the mean SCE for those not drinking alcohol in combine subjects. Other dietary parameters, including coffee intake, use of artificial sweetners and processed foods, did not show any increase in SCE. SCEs were inversely related to blood glucose and serum cholesterol levels of the combine subjects. No significant correlations were found between SCE frequencise and any other hematological parameters of the subjects.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.139-142
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• 2013

Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage ($V_T$) shift of 2.5 V in 1ms using a gate pulse of +14 V. The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, which becomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation as the nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction area is significantly reduced in the SiNW structure.

• Journal of Nutrition and Health
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• v.27 no.3
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• pp.253-262
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• 1994

This study was intended to investigate the anticarcinogenic effect of ginseng previously elucidated by other researches in animal studies. The sister chromatid exchange(SCE) method of human lymphocytes was used as a biomarker. Based on the literature search and the results of our laboratory, smoking was used as a parameter elevating the SCE frequency of general human population. To evaluate the smoking and ginseng effect on SCE frequency, 98 male healthy factory workers aged 23 to 58 years were divided into 4 groups : smoker with ginseng (SG), smoker control(SC), non-smoker with ginseng(NSG), and non-smoker control(NSC) groups, according to their smoking habits and ginseng intake. The mean sponteneous SCE per cell for the SG(10.8$\pm$0.3) and SC(10.4$\pm$0.3) groups were significantly higher than the NSG(9.1$\pm$0.2) and NSC(9.3$\pm$0.3) groups(p<0.05). High frequency cells (HFCs, cells with 15 SCEs) in SG and SC groups were also greater than those in NSG and NSC groups. However, the SCE levels of the SG and SC groups were not associated with the personal smoking history and the number of cigaretts smoked per day. Ginseng intake did not show any effect on the increased SCE caused by smoking. There were no correlations of the elevated SCE among smoking and ginseng types, history of ginseng intake, and consumption frequencies of ginseng intake. These results does not support the findings of other researchers that ginseng could be a protective agent to DNA damage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.110-119
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• 2007

A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (${\phi}_c$) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (${\phi}_s$). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.127-138
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• 2013

The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.887-890
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• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of The Korean Society of Clinical Toxicology
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• v.12 no.1
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• pp.8-13
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• 2014

Purpose: Glyphosate (N-phosphonomethyl glycine) is widely used as an herbicide for weed control in rural areas. It is also readily available for suicide attempts. Glyphosate has high toxicity and negatively affects the human body. The aim of this investigation was to study the genotoxicity of a low-concentration of glyphosate through sister chromatid exchange (SCE) in human blood lymphocytes in vitro. Methods: Primary lymphocyte cultures were obtained from blood samples of 11 males and seven females who had been exposed to glyphosate (0, 100, 200, and 300 ng/mL). The frequency of SCEs was examined and statistical analysis was performed. Results: All doses of glyphosate induced a significant dose-dependent increase in SCE frequency compared with the control group (P<0.001). In particular, the SCE frequency for exposure to low-dose glyphosate was significantly higher in females than in males. Conclusion: According to the result of this study, even a low-dose of glyphosate may damage DNA and females are more vulnerable to glyphosate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.182-189
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• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.572-578
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• 2014

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.