JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

  • Kim, Hyun Woo (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Kim, Jong Pil (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Kim, Sang Wan (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Sun, Min-Chul (TD Team (S. LSI), Device Solutions Business Group, Samsung Electronics Co. Ltd.) ;
  • Kim, Garam (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Kim, Jang Hyun (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Park, Euyhwan (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Kim, Hyungjin (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center and Department of Electrical Engineering, Seoul National University)
  • Received : 2014.05.12
  • Accepted : 2014.07.29
  • Published : 2014.10.30
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Abstract

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

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References

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