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http://dx.doi.org/10.5573/JSTS.2007.7.2.110

Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution  

Kushwaha, Alok (Electronics and Communication Engineering Department, Institute of Technology and Management)
Pandey, Manoj K. (Electronics and Communication Engineering Department, Institute of Technology and Management)
Pandey, Sujata (Electronics and Communication Engineering Department, Institute of Technology and Management)
Gupta, Anil K. (Electronics and Communication Engineering Department, National Institute of Technology)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.7, no.2, 2007 , pp. 110-119 More about this Journal
Abstract
A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (${\phi}_c$) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (${\phi}_s$). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.
Keywords
Double Gate (DG); Dual Material (DM); Fully Depleted (FD); Radio Frequency (RF); Silicon-on-Insulator (SOI); Short Channel Effects (SCEs);
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1 Y.K.Chen, G.W. Wang, D.C. Raduleson and L.F. Eastmen, 'Comparison of microwave performance between single-gate and dual-gate MODFET's,' IEEE Electron Device Lett., 1988,vol. 9, pp.59
2 R.H.Yan, A. Ourmazd and K.F.Lee, 'Scaling the Si MOSFET: from bulk to SOI', IEEE Transactions on Electron Devices, Vol. 39, pp. 1704-1710, 1992   DOI   ScienceOn
3 Charles G. Sodini, Ping-Keung Ko and John L. Moll, 'The effect of high fields on MOS Device and Circuit Performance', IEEE Transactions on Electron Devices, Vol. ED-31, No. 10, Oct. 1984, pp. 1386-1393
4 T.Furntsuka, M.Ogawa and N. Kawamura, 'GaAs dual gate MESFETs,' IEEE Trans. Electron Devices, vol. ED-25, 1978, pp. 580
5 D.J.Frank, S.E.Laux, and M.V.Fischetti, 'Momte-Carlo simulation of a 30-nm dual-gate MOSFET: how short can Si go ?,' in Int. Electron Devices Meeting Tech. Dig., 1992, pp. 553-556
6 K.Suzuki, T. Tanaka, Y. Tosaka, H.Horie and Y.Arimoto, 'Scaling theory for double gate SOI MOSFET's', IEEE Transactions on Electron Devices, vol. 40, No. 12, 1993, pp. 2326-2239   DOI   ScienceOn
7 Manoj K Pandey, Sujata Sen and R S Gupta, 'Thermal characterization of a double-gate silicon-on-insulator MOSFET', J. Phys. D: Appl.Phys. 32, 1999, pp. 344-349   DOI   ScienceOn
8 H.O.Joachin, Y. Yamaguchi, K. Ishikawa, I. Inoune and T. Nishimura, 'Simulation and two dimensional analytical modeling of subthreshold slope in ultra thin film SOI MOSFET's down to $0.1{\mu}m$ gate length,' IEEE Transaction on Electron Devices, vol. 40, 1993, pp. 1812-1817   DOI   ScienceOn
9 Akers A, 'The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET', Solid State Electronics, vol. 23 1989, pp 173-175   DOI   ScienceOn
10 W.K.Wofker, Philips Research Report Suppl., 8, 41 (1975)
11 G.Venkateshwar Reddy and M. Jagdesh Kumar, ' A New Dual Material Double-Gate Nanoscale SOI MOSFET-Two-Dimensional Analytical Modeling and Simulation', IEEE Transaction on Nanotechnology, vol.4, No.2 March 2005, pp.260-268   DOI   ScienceOn
12 K.Suzuki, Y. Tanaka, Y. Tosaka, H.Horie, Y.Arimoto and T. Itoh, 'Analyitical surface potential expression for thin film double gate SOI MOSFET's,' Solid State Electronics., vol. 37, 1994, pp. 327-332   DOI   ScienceOn
13 S. Cristoloveanu and F.Balsetra, 'SOI technologies, material and devices', CAS'96, Proceedings, 1996, pp.3-12
14 Alok Kushwaha, Manoj K Pandey and Anil Kumar Gupta, 'Pearson-IV type doping distribution based DM DG FD SOI MOSFET', Microwave and Optical Technology Letters, vol. 48, no. 4, April 2007, pp. 979-986
15 K.Suzuki, S. Satoh, T. Tanaka and S. Ando, 'Analytical models for symmetric thin-film double-gate silicon-on-insulator metal-oxide semiconductor field-effect transistors,' Jpn. J. Appl. Phy.,vol 32, 1993, pp.4916-4922   DOI
16 P. Hashemi, A. Behnam, E. Fathi, A. Afzali-Kusha, M.El Nokali, '2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET', Solid State Electroics, 49 ,2005, pp.1341-1346   DOI   ScienceOn
17 N. D. Arora , ' MOSFET Models for VLSI Circuits Simulation', Springer-Verlag Wien, NY