Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution |
Kushwaha, Alok
(Electronics and Communication Engineering Department, Institute of Technology and Management)
Pandey, Manoj K. (Electronics and Communication Engineering Department, Institute of Technology and Management) Pandey, Sujata (Electronics and Communication Engineering Department, Institute of Technology and Management) Gupta, Anil K. (Electronics and Communication Engineering Department, National Institute of Technology) |
1 | Y.K.Chen, G.W. Wang, D.C. Raduleson and L.F. Eastmen, 'Comparison of microwave performance between single-gate and dual-gate MODFET's,' IEEE Electron Device Lett., 1988,vol. 9, pp.59 |
2 | R.H.Yan, A. Ourmazd and K.F.Lee, 'Scaling the Si MOSFET: from bulk to SOI', IEEE Transactions on Electron Devices, Vol. 39, pp. 1704-1710, 1992 DOI ScienceOn |
3 | Charles G. Sodini, Ping-Keung Ko and John L. Moll, 'The effect of high fields on MOS Device and Circuit Performance', IEEE Transactions on Electron Devices, Vol. ED-31, No. 10, Oct. 1984, pp. 1386-1393 |
4 | T.Furntsuka, M.Ogawa and N. Kawamura, 'GaAs dual gate MESFETs,' IEEE Trans. Electron Devices, vol. ED-25, 1978, pp. 580 |
5 | D.J.Frank, S.E.Laux, and M.V.Fischetti, 'Momte-Carlo simulation of a 30-nm dual-gate MOSFET: how short can Si go ?,' in Int. Electron Devices Meeting Tech. Dig., 1992, pp. 553-556 |
6 | K.Suzuki, T. Tanaka, Y. Tosaka, H.Horie and Y.Arimoto, 'Scaling theory for double gate SOI MOSFET's', IEEE Transactions on Electron Devices, vol. 40, No. 12, 1993, pp. 2326-2239 DOI ScienceOn |
7 | Manoj K Pandey, Sujata Sen and R S Gupta, 'Thermal characterization of a double-gate silicon-on-insulator MOSFET', J. Phys. D: Appl.Phys. 32, 1999, pp. 344-349 DOI ScienceOn |
8 | H.O.Joachin, Y. Yamaguchi, K. Ishikawa, I. Inoune and T. Nishimura, 'Simulation and two dimensional analytical modeling of subthreshold slope in ultra thin film SOI MOSFET's down to gate length,' IEEE Transaction on Electron Devices, vol. 40, 1993, pp. 1812-1817 DOI ScienceOn |
9 | Akers A, 'The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET', Solid State Electronics, vol. 23 1989, pp 173-175 DOI ScienceOn |
10 | W.K.Wofker, Philips Research Report Suppl., 8, 41 (1975) |
11 | G.Venkateshwar Reddy and M. Jagdesh Kumar, ' A New Dual Material Double-Gate Nanoscale SOI MOSFET-Two-Dimensional Analytical Modeling and Simulation', IEEE Transaction on Nanotechnology, vol.4, No.2 March 2005, pp.260-268 DOI ScienceOn |
12 | K.Suzuki, Y. Tanaka, Y. Tosaka, H.Horie, Y.Arimoto and T. Itoh, 'Analyitical surface potential expression for thin film double gate SOI MOSFET's,' Solid State Electronics., vol. 37, 1994, pp. 327-332 DOI ScienceOn |
13 | S. Cristoloveanu and F.Balsetra, 'SOI technologies, material and devices', CAS'96, Proceedings, 1996, pp.3-12 |
14 | Alok Kushwaha, Manoj K Pandey and Anil Kumar Gupta, 'Pearson-IV type doping distribution based DM DG FD SOI MOSFET', Microwave and Optical Technology Letters, vol. 48, no. 4, April 2007, pp. 979-986 |
15 | K.Suzuki, S. Satoh, T. Tanaka and S. Ando, 'Analytical models for symmetric thin-film double-gate silicon-on-insulator metal-oxide semiconductor field-effect transistors,' Jpn. J. Appl. Phy.,vol 32, 1993, pp.4916-4922 DOI |
16 | P. Hashemi, A. Behnam, E. Fathi, A. Afzali-Kusha, M.El Nokali, '2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET', Solid State Electroics, 49 ,2005, pp.1341-1346 DOI ScienceOn |
17 | N. D. Arora , ' MOSFET Models for VLSI Circuits Simulation', Springer-Verlag Wien, NY |