• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.171-174
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• 2000

금속간 접촉에서의 Passive IMD는 Contact의 비선형 요인에 의해 발생된다고 알려져 있다. 금속접촉을 이루는 RF Conntctor의 PIMD 측정은 측정환경의 변화로 인해 재현성 있는 측정이 어렵다. 본 논문에서는 접촉력, 온도 및 습도로 인한 접촉조건의 변화에 의해 발생하는 PIMD 특성을 연구하고자 4 종류의 도금 재질을 갖는 어댑터를 설계 및 제작하였다. 제작된 어댑터의 PIMD 측정결과. PIMD 수준이 주로 접촉력 및 온도에 영향을 받으며, 측정환경의 명확한 규정이 PIMD의 측정 및 제어에 필수적임을 확인하였다.

• 대한기계학회논문집A
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• 제28권12호
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• pp.1937-1941
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• 2004

We present lateral actuated piezoelectric actuator using U-shaped PZT strip and lever structure for the RF switch application. In the previous study of RF switch, they used horizontal contact switch fabricated by thin film metals. However, thin film metals could not generate large contact force due to low stiffness. In this work, we suggest lateral contact switch which makes large contact force by increasing stiffness. In addition, we use PZT actuator for the high force actuation. Generally actuator using thin film PZT moves to the vertical direction due to the neutral axis shift. Therefore we need lateral motion generation mechanism based on the thin film PZT actuator. In order to increase lateral motion of thin film PZT actuator, we use U-shaped PZT actuator using residual stress control. Also, thin film PZT actuator can generate very small lateral motion of 120${\times}$10$^{-6}$ ${\mu}{\textrm}{m}$/V for d$_{31}$ mode, thus we suggest lever structure to increase stroke amplification. From the experimental study, fabricated PZT actuator shows maximum lateral displacement of 1 ${\mu}{\textrm}{m}$, and break down voltage of the thin film PZT actuator is above 16V.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.7-12
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• 2008

본 논문에서는 comb drive를 이용하여 수평 방향 저항 접촉 방식의 RF MEMS 스위치 개발을 소개한다. 무선통신 트랜시버에서 사용되는 FEM에서 사용될 수 있는 높은 안전성과 좋은 RF 특성을 가지는 스위치의 개발을 목표로 한다. 따라서 작은 삽입손실 특성을 가지기 위해 comb drive를 이용하여 큰 접촉 힘을 발생시키고, 큰 격리도 특성을 가지기 위해 스위치 off 상태에서 작은 정전용량을 갖도록 한다. 그리고 단결정 실리콘을 스위치의 구조물로 사용함으로써 기계적인 안전성을 갖도록 한다. 개발된 RF MEMS 스위치는 26 V의 동작 전압을 가지며, 2 GHz에서 0.44 dB 이하의 삽입손실과 60 dB 이상의 격리도 특성을 가진다.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.83-87
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• 2023

전자 및 반도체 기술 분야에서는 Si를 대체할 혁신적인 반도체 소재 연구가 활발하게 진행 중이다. 그러나 대체 소재에 대한 연구는 진행 중이지만 2차원 물질을 채널로 사용하는 트랜지스터의 구성요소, 특히 기생 저항과 RF(고주파) 응용 프로그램과의 관계에 대한 연구는 매우 부족한 편이다. 본 연구는 이러한 부족한 부분을 메우기 위해 다양한 트랜지스터 구조에 중점을 두고 전기적 성능에 미치는 영향을 체계적으로 분석하였다. 연구 결과, Access 저항과 Contact 저항이 반도체 소자 성능 저하의 주요 요인 중 하나로 작용함을 확인하였으며, 특히 고도로 scaling down된 경우 그 영향이 더욱 두드러지는 것을 확인하였다. 고주파 RF 소자에 대한 수요가 계속해서 증가함에 따라 원하는 RF 성능을 달성하기 위한 소자 구조 및 구성 요소를 최적화하기 위한 가이드라인을 수립하는 것은 매우 중요하다. 본 연구는 2차원 물질을 채널로 사용하는 다음 세대 RF 트랜지스터의 설계 및 개발에 도움이 될 수 있는 구조적 가이드라인을 제공함으로써 이 목표에 기여할 수 있다.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.116-120
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• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• 센서학회지
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• 제20권2호
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.516-521
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• 2014

An excellent hydrophobic surface has a high contact angle over 147 degree and the contact angle hysteresis below $5^0$ was produced by using roughness combined with hydrophobic PTFE coatings, which were also confirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched by Ar-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before or after PTFE coating on the plasma etched glass surface, based on Wensel's model were calculated, which agrees well with the dependence of the contact angle on the roughness factor is predicted by Wensel's model. The PTFE films deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etched Ar-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on the sputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. In particular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20 sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.