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A Study on RF MEMS Switch with Comb Drive  

Kang, Sung-Chan (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
Kim, Hyeon-Cheol (School of Electrical Engineering, Ulsan University)
Chun, Kuk-Jin (School of Electrical Engineering and Computer Science, Seoul National University, Inter-university Semiconductor Research Center)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.4, 2008 , pp. 7-12 More about this Journal
Abstract
This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.
Keywords
comb drive; lateral resistive contact; RF MEMS switch; single crystalline silicon;
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