• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.171-174
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• 2000

금속간 접촉에서의 Passive IMD는 Contact의 비선형 요인에 의해 발생된다고 알려져 있다. 금속접촉을 이루는 RF Conntctor의 PIMD 측정은 측정환경의 변화로 인해 재현성 있는 측정이 어렵다. 본 논문에서는 접촉력, 온도 및 습도로 인한 접촉조건의 변화에 의해 발생하는 PIMD 특성을 연구하고자 4 종류의 도금 재질을 갖는 어댑터를 설계 및 제작하였다. 제작된 어댑터의 PIMD 측정결과. PIMD 수준이 주로 접촉력 및 온도에 영향을 받으며, 측정환경의 명확한 규정이 PIMD의 측정 및 제어에 필수적임을 확인하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1937-1941
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• 2004

We present lateral actuated piezoelectric actuator using U-shaped PZT strip and lever structure for the RF switch application. In the previous study of RF switch, they used horizontal contact switch fabricated by thin film metals. However, thin film metals could not generate large contact force due to low stiffness. In this work, we suggest lateral contact switch which makes large contact force by increasing stiffness. In addition, we use PZT actuator for the high force actuation. Generally actuator using thin film PZT moves to the vertical direction due to the neutral axis shift. Therefore we need lateral motion generation mechanism based on the thin film PZT actuator. In order to increase lateral motion of thin film PZT actuator, we use U-shaped PZT actuator using residual stress control. Also, thin film PZT actuator can generate very small lateral motion of 120${\times}$10$^{-6}$ ${\mu}{\textrm}{m}$/V for d$_{31}$ mode, thus we suggest lever structure to increase stroke amplification. From the experimental study, fabricated PZT actuator shows maximum lateral displacement of 1 ${\mu}{\textrm}{m}$, and break down voltage of the thin film PZT actuator is above 16V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.7-12
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• 2008

This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.83-87
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• 2023

In the field of electronics and semiconductor technology, innovative semiconductor material research to replace Si is actively ongoing. However, while research on alternative materials is underway, there is a significant lack of studies regarding the relationship between 2D materials used as channels in transistors, especially parasitic resistance, and RF (radio frequency) applications. This study systematically analyzes the impact on electrical performance with a focus on various transistor structures to address this gap. The research results confirm that access resistance and contact resistance act as major factors contributing to the degradation of semiconductor device performance, particularly when highly scaled down. As the demand for high-frequency RF components continues to grow, establishing guidelines for optimizing component structures and elements to achieve desired RF performance is crucial. This study aims to contribute to this goal by providing structural guidelines that can aid in the design and development of next-generation RF transistors using 2D materials as channels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.116-120
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• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.516-521
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• 2014

An excellent hydrophobic surface has a high contact angle over 147 degree and the contact angle hysteresis below $5^0$ was produced by using roughness combined with hydrophobic PTFE coatings, which were also confirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched by Ar-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before or after PTFE coating on the plasma etched glass surface, based on Wensel's model were calculated, which agrees well with the dependence of the contact angle on the roughness factor is predicted by Wensel's model. The PTFE films deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etched Ar-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on the sputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. In particular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20 sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.