• Proceedings of the Korea Society for Industrial Systems Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30㎓

• Advances in materials Research
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• v.1 no.1
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• pp.37-49
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• 2012

In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.57-57
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.58-58
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• 2000

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1010-1019
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• 2005

In this paper, we used neural network technique to model memory effects of RF power amplifier which is fed by two-tone input signals. The memory effects in power amplifier were identified by observing the unsymmetrical distribution of IMD(Inter-Modulation Distortion) measurements with the change of tone spacings and power levels. Different asymmetries of IMD were also found at different center frequencies. We applied TDNN technique to model LDMOS power amplifier based on two tone IMD data, and the accuracy was very high compared to other modeling methods such as the(memoryless) adaptive modeling method.

• Journal of IKEEE
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• v.27 no.4
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• pp.650-656
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• 2023

This paper implements a channel model for mmWave bands using an NS-3-based 5G system-level simulator and analyzes the reliability and validity of the implemented model through RF performance verification. The channel model for RF performance verification in the mmWave bands consider parameters such as characteristics defined in 3GPP TR 38.901, beam-forming, antenna configuration, scenarios, among others. Furthermore, the simulation results verify compliance within the ranges permitted by the 3GPP standards and verify reliability in indoor environmental scenarios by exploiting the Radio Environment Map (REM). Therefore, the channel model implemented in this study is applicable to the actual design and establishment of 5G networks, presenting a method to evaluate and validate RF performance by adjusting various parameters.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.33-39
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• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.11-16
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• 2017

The frequency dependent input resistance observed in RF MOSFETs is analyzed in detail by deriving pole and zero frequency equations from a simplified input equivalent circuit. Using this theoretical analysis, we find that the reduction effect of the input resistance in the low frequency region arises from the channel resistance between source and pinch-off region in the saturation region. This channel resistance effect on the low frequency reduction of the input resistance is physically validated by performing small-signal equivalent circuit modeling with varying the channel resistance.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.261-264
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• 2004

In this paper, we identify the memory effect of high power(125W) laterally diffused metal oxide-semiconductor(LDMOS) RF Power Amplifier(PA) by two tone IMD measurement. We measure two tone IMD by changing the tone spacing and the power level. Different asymmetric IMD is founded at different center frequency measurements. We propose the Tapped Delay Line-Neural Network(TDNN) technique as the modeling method of LDMOS PA based on two tone IMD data. TDNN's modeling accuracy is highly reasonable compared to the memoryless adaptive modeling method.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.2
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• pp.83-91
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• 2012

An RF energy detector for spectrum sensing in TV white space transceiver is presented. It is based on an RF active filtering technique that comprises a low-noise amplifier with a frequency-translation high-pass filtering feedfoward loop, which attenuates the unwanted sideband energy and only passes the wanted band energy. Unlike the conventional architecture, a new architecture that can attenuate both sidebands at the same time is proposed. A simplified system modeling method is presented to assess the non-ideality effects on the RF energy detector performances. System behavioral simulations demonstrate that the proposed architecture can be instrumental for realizaing a RF energy detector circuit in CMOS.