Browse > Article
http://dx.doi.org/10.5573/ieie.2017.54.5.11

Theoretical Analysis of Frequency Dependent Input Resistance in RF MOSFETs  

Ahn, Jahyun (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.54, no.5, 2017 , pp. 11-16 More about this Journal
Abstract
The frequency dependent input resistance observed in RF MOSFETs is analyzed in detail by deriving pole and zero frequency equations from a simplified input equivalent circuit. Using this theoretical analysis, we find that the reduction effect of the input resistance in the low frequency region arises from the channel resistance between source and pinch-off region in the saturation region. This channel resistance effect on the low frequency reduction of the input resistance is physically validated by performing small-signal equivalent circuit modeling with varying the channel resistance.
Keywords
MOSFET; CMOS; input resistance; RF modeling; frequency dependence;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 J.-Y. Kim, M.-K. Choi, and S. Lee, "A thru-short-open de-embedding method for accurate on-wafer RF measurements of nano-scale MOSFETs," J. Semicond. Technol. Sci., Vol. 12, No. 1, pp. 53-58, Mar., 2012.   DOI
2 S. Hong and S. Lee, "Physical origin of gate voltage-dependent drain-source capacitance in short-channel MOSFETs," Electron. Lett. vol. 50, no. 24, pp. 1879-1881, Nov. 2014.   DOI
3 S. Hong and S. Lee, "Large-signal output equivalent circuit modeling for RF MOSFET IC simulation," J. Semicond. Technol. Sci., vol. 15, no. 5, pp. 485-489, 2015   DOI
4 S. Hong and S. Lee, "Improved high-frequency output equivalent circuit modelling for MOSFETs," Electron. Lett., vol. 51, no. 24, pp. 2045-2047, Nov. 2015.   DOI
5 S. Lee, "Accurate RF extraction method for resistances and inductances of sub-0.1 ${\mu}m$ CMOS transistors," Electron. Lett., vol. 41, no. 24, pp.1325-1327, Nov., 2005.   DOI
6 Y. Lee, M. Choi, J. Koo, and S. Lee, "Bias and gate-length dependent data extraction of substrate circuit parameters for deep submicron MOSFETs," Journal of The Institute of Electronics Engineers of Korea - Semiconductor and Devices, vol. 41, no. 12, pp. 27-34, 2004.
7 J. Ahn and S. Lee, "Frequency-Dependence Analysis of RF Input Resistance for Multi-Finger Power MOSFETs," in Proc. of 2014 IEIE Fall Conference, pp. 65-66, Nov. 2014.
8 J. Ahn and S. Lee, "Measurement and analysis of gate finger number dependence of input resistance for sub-micron MOSFETs," J. Institute of Electronics and Information Engineers, vol. 51, no. 12, pp. 2695-2701, Dec. 2014.
9 J. Ahn and S. Lee, "Analysis of kink phenomenon in $S_{11}$-parameter of standard RF MOSFETs," Electron. Lett. vol. 51, no. 18, pp. 1453-1455, Sep. 2015.   DOI
10 Y. S. Lin, "An analysis of small-signal source body resistance effect on RF MOSFETs for low-cost system-on-chip (SoC) applications," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1442-1451, July 2005.   DOI
11 Y. S. Lin and S. S. Lu, "An analysis of small-signal gate-drain resistance effect on RF power MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 525-528, Feb. 2003.   DOI
12 J. Cha, J. Cha and S. Lee, "Uncertainty analysis of two-step and three-step method for de-embedding on-wafer RF transistor measurements," IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2195-2201, Aug. 2008.   DOI