Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Theoretical Analysis of Frequency Dependent Input Resistance in RF MOSFETs

RF MOSFET의 주파수 종속 입력 저항에 대한 이론적 분석

  • Ahn, Jahyun (Department of Electronics Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
  • 안자현 (한국외국어대학교 전자공학과) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Received : 2016.12.01
  • Accepted : 2017.04.11
  • Published : 2017.05.25
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Abstract

The frequency dependent input resistance observed in RF MOSFETs is analyzed in detail by deriving pole and zero frequency equations from a simplified input equivalent circuit. Using this theoretical analysis, we find that the reduction effect of the input resistance in the low frequency region arises from the channel resistance between source and pinch-off region in the saturation region. This channel resistance effect on the low frequency reduction of the input resistance is physically validated by performing small-signal equivalent circuit modeling with varying the channel resistance.

RF MOSFET에서 관찰된 입력 저항의 주파수 종속 특성이 단순화된 입력 등가회로로부터 유도된 pole과 zero 주파수 수식을 사용하여 자세히 분석되었다. 이러한 이론적 분석을 사용하여 저주파에서 입력저항의 감소현상이 포화영역에서 소스와 pinch-off 영역 사이의 채널저항으로부터 발생되는 것을 발견하였다. 이와 같이 저주파에서 입력저항이 감소하는 채널 저항 효과는 채널저항을 변화시키면서 소신호 등가회로 모델링을 수행하여 물리적으로 입증되었다.

Keywords

References

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