• Title/Summary/Keyword: RF 특성

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Minimum Energy Per Bit by Power Model in the Wireless Transceiver System (무선 통신 시스템의 전력 모델을 이용한 비트당 최소 에너지)

  • Choi, Jae-Hoon;Jo, Byung-Gak;Baek, Gwang-Hoon;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.12
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    • pp.1078-1085
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    • 2011
  • In this paper, we analyze the relationship between energy per bit and the data rate with the variation of the system bandwidth. A existing power model is mathematical model to express power consumption of each device. In this paper, we have to investigate the system level energy model for the RF front-end of a wireless transceiver. Also, the effects of the signal bandwidth, PAR, date rate, modulation level, transmission distance, specific attenuation of frequency band, and the signal center frequency on the RF front-end energy consumption and system capacity are considered. Eventually, we analyze the relationship between energy per bit and the data rate with the variation of the system bandwidth so that we simulate the minimum energy per bit in the several Gbps data rate using Shannon capacity theory.

Small signal model and parameter extraction of SOI MOSFET's (SOI MOSFET's의 소신호 등가 모델과 변수 추출)

  • Lee, Byung-Jin;Park, Sung-Wook;Ohm, Woo-Yong
    • 전자공학회논문지 IE
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    • v.44 no.2
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    • pp.1-7
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    • 2007
  • The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

Parametric study of inductively coupled plasma etching of GaN epitaxy layer (GaN epitaxy 층의 식각특성에 미치는 공정변수의 영향)

  • Choi, Byoung Su;Park, Hae Li;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.4
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    • pp.145-149
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    • 2016
  • The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD (RF-PECVD법에 의해 증착된 DLC 박막의 결합구조와 기계적 특성에 관한 보조가스의 영향)

  • Choi, Bong-Geun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.4
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    • pp.145-152
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    • 2015
  • In this work, we were investigated the effect of the additive gases on the relationship between bonding structure and mechanical properties of the deposited films when the DLC films were deposited on Si-wafer by the rf-PECVD method with the addition of small amounts of carbon dioxide and nitrogen to the mixture gas of methane and hydrogen. The deposition rate of the films increased as the rf-power increased, while it decreased with increasing the amount of additive gases. Also, as the carbon dioxide gas increased, the hydrogen content in the films decreased but the $sp^3/sp^2$ ratio of the films increased. In case of nitrogen gas, the hydrogen content decreased, however the $sp^3/sp^2$ ratio and nitrogen gas flow rate did not show a specific tendency.

The Effects of Substrate Temperature on Properties of Carbon Nanotube Films Deposited by RF Plasma CVD (RF Plasma CVD법에 의해 증착된 카본나노튜브(CNT)의 특성에 대한 기판 온도의 영향)

  • Kim, Dong-Sun
    • Korean Chemical Engineering Research
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    • v.46 no.1
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    • pp.50-55
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    • 2008
  • Carbon Nanotube (CNT) films were deposited with varying deposition temperature by RF plasma CVD on Fe catalysts deposited onto $SiO_2$ films grown thermally on the silicon wafer using $C_2H_2$ and $H_2$ gases. The Fe catalysts on silicon oxide film were made by RF magnetron sputtering. The grounded grid mesh cover on the substrate holder was used for depositing CNT thin films with high purity. The surface morphologies and chemical structure of deposited CNT films were characterized using SEM, Raman, XPS and TEM. It was observed that deposited CNTs films were carbon fiber type having Bamboo-like multiwall structure and CNT film grown at $600^{\circ}C$ was more dense than that at $550^{\circ}C$, but become less dense at $650^{\circ}C$.

Effects of Deposition Conditions on Magnetic Properties of SmCo/Cr (스퍼터 제조조건에 따르는 SmCo/Cr 박막의 자기적 특성에 관한 연구)

  • 나태준;고광식;이성래
    • Journal of the Korean Magnetics Society
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    • v.9 no.6
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    • pp.312-320
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    • 1999
  • Effect of deposition conditions on the magnetic properties of SmCo/Cr prepared by a RF magnetron sputtering method was studied. We obtained the maximum coercivity of 3.2 kOe in the sample of Cr(50 nm)/SmCo(40 nm, 50W, 20 mT)/Cr(150 nm, 100 W, 30 mT). The coercivity of the SmCo/Cr depends largely on the roughness of the Cr underlayer and the composition of SmCo. The roughness of the Cr underlayer increased with increasing the Ar pressure and thickness, and promoted the isolation of SmCo grains which resulted in an enhanced coercivity. The composition of the SmCo was changed with RF power and Ar pressure due to the mass difference between Sm and Co and the resputtering phenomena. The maximum coercivity was obtained in the composition of about 20 at.% Sm. The mechanism of magnetization reversal of the present SmCo films changed from domain wall motion to domain rotation as the RF power and the Ar pressure increase. This was though to be due to the defects, such as the roughness of Cr surface, porous column boundaries etc., which inhibit domain wall movement.

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