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http://dx.doi.org/10.6111/JKCGCT.2016.26.4.145

Parametric study of inductively coupled plasma etching of GaN epitaxy layer  

Choi, Byoung Su (Department of Nano Fusion Technology, Pusan National University)
Park, Hae Li (Department of Nanomechatronics Engineering, Pusan National University)
Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
Abstract
The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.
Keywords
GaN etching; Inductively coupled plasma; $Cl_2/Ar$ and $SF_6/Ar$; Etch rate; Anisotropy;
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Times Cited By KSCI : 3  (Citation Analysis)
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