• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.699-702
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• 2003

본 논문에서는 주파수 1∼7GHz 에서 게이트 바이어스가 □ 2.0 ∼ 2.0 V 일때 사용 가능한 축적형 버랙( accumulation mode varactor )의 RF 모델링 기법을 제안하였다. 기존의 모델링 기법은 가변 커패시터가 존재하는 부분에서 임피던스의 실수성분이 일정한 값을 가지는 것으로 모델링 하였으나 소자의 측정결과를 통하여 실수성분이 일정한 값이 아닌 주파수에 따라 변화하는 값임을 알았다. 이를 설명하기 위해서 기존의 모델링 기법에 커패시터와 저항을 하나씩 추가하여 새로운 모델을 구성하고 각각의 파라미터를 추출하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1220-1228
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• 2010

In this paper, we suggest a scheme to develop an efficient discrete nonlinear model based on polynomial structure for a RF power amplifier(PA). We describe a procedure to extract a discrete nonlinear model such as Taylor series or memory polynomial by sampling the input and output signal of RF PA. The performance of the model is analyzed varying the model parameters such as sample rate, nonlinear order, and memory depth. The results show that the relative error of the model is converged if the parameters are larger than specific values. We suggest an efficient modeling scheme considering complexity of the discrete model depending on the values of the model parameters. Modeling efficiency index(MEI) is defined, and it is used to extract optimum values for the model parameters. The suggested scheme is applied to discrete modeling of various RF PAs with various input signals such as WCDMA, WiBro, etc. The suggested scheme can be applied to the efficient design of digital predistorter for the wideband transmitter.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.2 s.7
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• pp.23-31
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• 2005

ITS(Intelligent Transportation System) implementing information collection services and information support services for cars of moving fast needs a communication system of special aim such as RF-DSRC(Radio Frequency Dedicated Short Range Communication). Before RSE(Road Side Equipment) and OBE(On-Board Equipment) will be able to communicate RF-DSRC, OBE first have to request Link Initialization Access using ACTC(Activation Channel) in allocated ACTS(Activation Slot) by Slotted ALOHA. Even though Link Initialization Access is a important element to decide performance of communication system, optimal mathematic modeling study of Link Initialization Access which is adapted RF-DSRC characteristics is not enoush. So, in this paper, we propose mathematical modeling about Link Initialization Access of RF-DSRC. And then we computed Link Initialization Access probability defining offer load(G) which is adapted RF-DSRC characteristics for analyzing performance of modeling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.555-559
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• 2003

In this paper, a new CMOS RF model for RF IC design including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for tile first time for accurately predicting the RF behavior of CMOS devices. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled with a parallel branch added in equivalent circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3. the proposed RF model shows good agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.1
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• pp.40-48
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• 2015

In this paper, we suggest a measurement modeling of the RF seeker using the ISAR(Inverse Synthetic Aperture Radar) image. Reference scattering points are extracted first from ISAR images which are changed according to target attitude. And then uncertainties included in RF seeker measurement such as noise strength, blink, and boresight error are added to the reference scattering points. The proposed measurement model of the RF seeker can be used to develop various kinds of target tracking algorithms.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1010-1019
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• 2005

In this paper, we used neural network technique to model memory effects of RF power amplifier which is fed by two-tone input signals. The memory effects in power amplifier were identified by observing the unsymmetrical distribution of IMD(Inter-Modulation Distortion) measurements with the change of tone spacings and power levels. Different asymmetries of IMD were also found at different center frequencies. We applied TDNN technique to model LDMOS power amplifier based on two tone IMD data, and the accuracy was very high compared to other modeling methods such as the(memoryless) adaptive modeling method.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.94-101
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• 2009

This paper presents scalable modeling of spiral inductors for RFIC design based on $0.13{\mu}m$ RF CMOS process. For scalable modeling, several inductor patterns are designed and fabricated with variations of width, number of turns and inner radius. Feeding structures are optimized for accurate de-embedding of pad effects. After measuring the S parameters of the fabricated patterns, double-$\pi$ equivalent circuit parameters are extracted for each device and their geometrical dependences are modeled as scalable functions. The inductor library provides two types of models including standard and symmetric inductors. Standard and symmetric inductors have the range of $0.12{\sim}10.7nH$ and $0.08{\sim}13.6nH$ respectively. The models are valid up to 30GHz or self-resonance frequency. Through this research, a scalable inductor library with an error rate below 10% is developed for $0.13{\mu}m$ RF CMOS process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.57-57
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.58-58
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• 2000