• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1966-1968
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• 1998

This paper describes a gate drive circuit for series connected IGBTs in high voltage applications. The proposed control criterion of the gate circuit is to actively limit the voltages during switching transients, while minimizing switching transient and losses. In order to achieve the control criterion, an analog closed loop control scheme is adopted. The performance of gate drive circuit is examined experimentally by the series connection of three IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by an active control under wide variation in loads and imbalance conditions.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.414-417
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• 1988

Recently PLC pursues faster scanning time, circuit confidence, reliability improvement, and smaller size. To obtain above all merit, custom IC(Gate Array) is developed. Custom IC includes 5 main blocks and 2 auxiliary blocks. The 5 main blocks process faster sequential instruction execution by only logic gate using hexa instruction code system. And the 2 auxiliary blocks generate baud rate clock (153.6 KHz, 76.8KHz) to communicate between PLC and computer or programmers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.77-83
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• 2011

In this thesis, 50W Doherty amplifier was designed and implemented for Beyond 3G's repeater and base-station. Auxiliary amplifier of doherty amplifier was implemented by Gate bias control circuit. Though gate bias control circuit solved auxiliary's bias problem, output characteristics of doherty amplifier was limited. To enhance the output characteristic relativize Drain control circuit And To improve power efficiency make 3-way Doherty power amplifier. therefore, 3-way GDCD (Gate and Drain bias Control Doherty) power amplifier is embodied to drain bias circuit for General Doherty power amplifier. The 3-way GDCD power amplifier composed of matching circuit with chip capacitor and micro strip line using FR4 dielectric substance of specific inductive capacity(${\varepsilon}r$) 4.6, dielectric substance height(H) 30 Mills, and 2.68 Mills(2 oz) of copper plate thickness(T). Experiment result satisfied specification of amplifier with gains are 57.03 dB in 2.11 ~ 2.17 GHz, 3GPP frequency band, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and ACLR characteristics at 5MHz offset frequency band station is -40.45 dBc. Especially, 3-way DCHD power amplifier showed excellence efficiency performance improvement in same ACLR than general doherty power amplifier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.218-221
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we have investigated a structure to reduce the on-resistance characteristics of the MOSFET. We have a proposed MOSFET structure of active cells region buried under the gate pad. The measurement are carried out with a EDS to analyze electrical characteristics, and the proposed MOSFET are compared with the conventional MOSFET. The result of proposed MOSFET was 1.68[${\Omega}$], showing 10% improvement compared to the conventional MOSFET at 700[V].

• Proceedings of the KIEE Conference
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• 1995.07b
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• pp.919-921
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• 1995

In this paper, development of Thermal Printer Head(TPH) controller by using gate array having high reliability and good performance is proposed. Over the 3000 gates are performed to control print image data signals and relative peripheral hardwares. The proposed gate array has TPH control circuit, print control and step motor drive, and print image data control, decoder output control parts. This TPH controller will be a good application to FAX or label printer and barcode printers.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1211-1214
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• 1992

AC servo motor drives, Fara DS series, proposed in this paper can be effectively used in robots, CNC machine tools, and FA system with AC servo motors as actuators. The inverter of the AC servo drive consists of IGBT (Insulated Gate Bipolar Transistor) which have high switching frequency. Noises and vibrations generated in variable speed control of AC servo motors can be greatly reduced due to their high switching frequencies. In the developed servo drive, maximum torque is always generated in the whole speed range by compensating phase shift, which results from the nonlinearies of the AC servo motor during abrupt acceleration and deceleration. Abundant protection functions are provided to prevent abnormal state of the servo motor, and furthermore diverse user options are considered provided for the effective application. The proposed AC servo motor drive is designed to minimize velocity variation with respect to external load, supply voltage, environmental temperature, and humidity, so can be widely used in the fields of factory automation including robots and CNC msachine tools.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.331-341
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• 2013

In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.1
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• pp.1-7
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• 2008

This paper presents electromagnetic interference(EMI) suppression method applied on the direct current(DC) motor driver for power tail gate control. EMI noise is generated by the fast switching of power devices connected to electric loads. It has become a matter of concern because of the vast increase in the number and sophistication of electronic system in automotive environment. The proposed EMI reduction method is based on the principle of reducing the transient speed of power devices by changing the parameters of the driver circuit related to the power MOSFET. In this paper, power losses were calculated by loss equations and thermal simulation was used to evaluate the effect on printed circuit board. Based on these results, the DC motor driver was fabricated and tested. The proposed method can help to design a DC motor driver which allows it to obtain an acceptable compromise between power losses and EMI.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.627-630
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• 1991

This study is about vector controlled inverter for high quality elevator drive that is to improve the settling accuracy of elevator car and passenger's comfort in commercial buildings. In this study, an instantaneous space vector control type inverter was used to reduce the torque ripple ant to improve the velocity follow-up. This method calculates Instantaneous actual output torque and flux of induction motor by voltage and current, then compares them with a reference values by a speed regulator. The outputs of comparators select a switching mode, for an optimal voltage vector. Also, this study used IGBT (Insulated Gate Bipolar-Transistor), a high speed switching element, to reduce sound noise level, and DSP (Digital Signal Processor) was used to improve the reliability of the control circuit by fully digitalization.