JSTS:Journal of Semiconductor Technology and Science

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Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

  • Bhattacharya, Monika (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus) ;
  • Jogi, Jyotika (Department of Electronic Science, A.R.S.D. College, University of Delhi, South Campus) ;
  • Gupta, R.S. (Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology) ;
  • Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus)
  • Received : 2012.07.13
  • Accepted : 2013.03.26
  • Published : 2013.08.31
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Abstract

In the present work, the effect of the gate-to-drain capacitance ($C_{gd}$) on the noise performance of a symmetric tied-gate $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters ($Y_{11}$ and $Y_{21}$ which are obtained incorporating the effect of $C_{gd}$), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-to-drain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

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References

  1. B.G. Vasallo , N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. Gonzalez , D. Pardo and J. Mateos, "Comparison Between the Noise Performance of Double- and Single- Gate InP Based HEMTs", Electron Devices, IEEE Transactions on, Vol.55, No. 6, pp. 1535-1540, 2008. https://doi.org/10.1109/TED.2008.921982
  2. B.G. Vasallo , N.Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. Gonzalez , D. Pardo, and J. Mateos, "Comparison Between the Dynamic Performance of Double- and Single- Gate InP Based HEMTs" , Electron Devices, IEEE Transactions on , Vol.54, No.11, pp. 2815-2822, 2007. https://doi.org/10.1109/TED.2007.907801
  3. B.G. Vasallo , Nicolas Wichmann, Sylvain Bollart, Yannick Roelens, A. Cappy, Tomas Gonzalez , Daniel Pardo, and Javier Mateos, "Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs", Ist European Microwave Integrated Circuits Conference, Proceedings of the, pp. 304-307,September, 2006.
  4. N. Wichmann, I. Duszynski, S. Bollart, X. Wallart, Javier Mateos, A. Cappy, "InGaAs/InAlAs Double- Gate HEMTs on transferred substrate", Electron Device Letters, IEEE, Vol.25, No. 6, pp. 354-356, 2004. https://doi.org/10.1109/LED.2004.829029
  5. N. Wichmann ,I. Duszynski, S. Bollaert, X. Wallart, J. Mateos, A. Cappy, "100nm InAlAs/InGaAs Double-Gate HEMT using transferred substrate", IEDM Tech. Dig., pp. 1023-1026, December, 2004.
  6. N. Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy, "Double Gate HEMTs on Transferred Substrate", Indium Phosphide and related materials, International Conference on, pp. 118- 121, 2003.
  7. M. Bhattacharya, J. Jogi, R.S. Gupta, M. Gupta, "Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications", Solid-State Electronics, Volume 63, No. 1, pp. 149- 153, September, 2011. https://doi.org/10.1016/j.sse.2011.05.025
  8. R.A. Pucel, H.A. Haus , H. Statz, "Signal and Noise properties of GaAs microwave FET", Advances in electronics and electron physics, Academic, New York , Vol. 38, pp. 195-265, 1975.
  9. Y. Ando, T. Itoh, "DC, Small-signal, and Noise Modeling for Two Dimensional Electron Gas Field-Effect Transistors Based on Accurate Charge-Control Characteristics", Electron Devices, IEEE Transactions on ,Vol.37, No. 1, pp. 67-78, 1990. https://doi.org/10.1109/16.43802
  10. A.F.M Anwar and K.W. Liu, "A noise model for high electron mobility transistors", Electron Devices , IEEE Transactions on, Vol. 41, No. 11, pp. 2087-2092, 1994. https://doi.org/10.1109/16.333827
  11. M. Bhattacharya, J. Jogi, R.S. Gupta, and M. Gupta., "An Accurate Charge Control Based Approach for Noise Performance Assessment of a Symmetric Tied-gate InAlAs/InGaAs DG-HEMT", Electron Devices, IEEE Transactions on, Vol .59, No. 6, pp. 1644-1652, 2012. https://doi.org/10.1109/TED.2012.2190738
  12. ATLAS Device Simulator, SILVACO International 2010.
  13. H. Fukui, "Optimal Noise Figure of microwave GaAs MESFETs", Electron Devices, IEEE Transactions on, Vol. 26, No. 7, pp. 1032-1037, 1979. https://doi.org/10.1109/T-ED.1979.19541
  14. T.M. Brooks, "The Noise properties of High Electron Mobility Transistors", Electron Devices, IEEE Transactions on, Vol. 33, No. 1, pp. 52-57, 1986. https://doi.org/10.1109/T-ED.1986.22436
  15. A. Cappy and W. Heinrich, "High frequency FET noise performance: A new approach", Electron Devices, IEEE Transactions on, Vol. 36, no. 2, pp. 403-409, 1989. https://doi.org/10.1109/16.19943
  16. N. Dasgupta, A. Dasgupta, "An Analytical expression for sheet-carrier concentration Vs gatevoltage for HEMT modeling, Solid-State Electronics, Vol. 36, No. 2, pp. 201-203,1993. https://doi.org/10.1016/0038-1101(93)90140-L
  17. Vandana Guru, H.P. Vyas, Mridula Gupta, R.S. Gupta, "Analytical Noise Model of a High Electron Mobility Transistor for Microwave Frequency Application", Microwave and Optical Technology Letters, Vol. 40, No. 5, pp. 410-417, 2004. https://doi.org/10.1002/mop.11396
  18. H. Statz, H.A. Haus, R.A. Pucel, "Noise characteristics of Gallium Arsenide Field Effect Transistors, Electron Devices, IEEE Transactions on, Vol.21, No. 9, pp. 549-562, 1974. https://doi.org/10.1109/T-ED.1974.17966
  19. Vandana Guru , H.P. Vyas, Mridula Gupta, R.S. Gupta, "Evaluation of Scattering Parameters, Gain, and Feedback-Capacitance Dependent Noise Performance of a Pseudomorphic High Electron Mobility Transistor", Microwave and Optical Technology Letters, Vol. 47, No. 1, pp. 51-56, 2005. https://doi.org/10.1002/mop.21079