• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.900-909
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• 2018

A $ZnO/TiO_2$ photocatalyst decorated with PbS quantum dots (QDs) was synthesized to achieve high photocatalytic efficiency for the decomposition of dye in aqueous media. A $TiO_2$ porous layer, as a precursor photocatalyst, was fabricated using micro-arc oxidation, and exhibited irregular porous cells with anatase and rutile crystalline structures. Then, a ZnO-deposited $TiO_2$ catalyst was fabricated using a zinc acetate solution, and PbS QDs were uniformly deposited on the surface of the $ZnO/TiO_2$ photocatalyst using the successive ionic layer adsorption and reaction (SILAR) technique. For the PbS $QDs/ZnO/TiO_2$ photocatalyst, ZnO and PbS nanoparticles are uniformly precipitated on the $TiO_2$ surface. However, the diameters of the PbS particles were very fine, and their shape and distribution were relatively more homogeneous compared to the ZnO particles on the $TiO_2$ surface. The PbS QDs on the $TiO_2$ surface can induce changes in band gap energy due to the quantum confinement effect. The effective band gap of the PbS QDs was calculated to be 1.43 eV. To evaluate their photocatalytic properties, Aniline blue decomposition tests were performed. The presence of ZnO and PbS nanoparticles on the $TiO_2$ catalysts enhanced photoactivity by improving the absorption of visible light. The PbS $QDs/ZnO/TiO_2$ heterojunction photocatalyst showed a higher Aniline blue decomposition rate and photocatalytic activity, due to the quantum size effect of the PbS nanoparticles, and the more efficient transport of charge carriers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Advances in nano research
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• v.1 no.4
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• pp.203-210
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• 2013

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1562-1566
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• 2006

Mesoporous silica films with three different pore sizes were prepared by using cationic surfactant, non-ionic surfactant, or triblock copolymer as structure directing agents with tetramethylorthosilicate as silica source in order to control the pore size and wall thickness. They were synthesized by an evaporation-induced self-assembly process and spin-coated on Si wafer. Mesoporous silica films with three different pore sizes of 2.9, 4.6, and 6.6 nm and wall thickness ranging from $\sim$1 to $\sim$3 nm were prepared by using three different surfactants. These materials were optically transparent mesoporous silica films and crack free when thickness was less than 1 m m. The photoluminescence spectra found in the visible range were peaked at higher energy for smaller pore and thinner wall sized materials, consistent with the quantum confinement effect within the nano-sized walls of the silica pores.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• Journal of Magnetics
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• v.11 no.4
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• pp.160-163
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• 2006

We have prepared crystalline Ag nanoparticles with an average size of 4 nm in diameter by using an inductively coupled plasma reactor equipped with the liquid nitrogen cooling system. Our magnetic data show that the nano-sized effect of Ag nanoparticles on the magnetic properties is ferromagnetic, instead of a diamagnetic component of the Ag bulk and a superparamagnetic component of magnetic nanoparticles. We have also studied the magnetic properties of Ag-Cu nanocomposites with an opposite concentration profile between surface and core. These comparisons indicate that the ferromagnetic component strongly depends on the surface of Ag nanoparticles, while the paramagnetic component is strongly affected by the outer oxide layer, with the background of a diamagnetic component from the core of Ag.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.13-16
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• 2003

Magnetic and magneto-optical properties of Fe/Pt/Fe, Co/Pd/Co trilayers and also the sandwiches with wedge-shaped magnetic (Fe, Co) and nonmagnetic (Pt, Pd) layers were investigated. The oscillatory behavior of the saturation field $H_{s}$ of the studied trilayers with changing the thickness of the nonmagnetic layer (NML) $t_{NML}$ was revealed. That was explained by the exchange coupling between ferromagnetic layers (FML) through the nonmagnetic spacer. For the first time, oscillations of the transverse Kerr effect (TKE) with changing the Pt- and Pd-wedge thickness were discovered. Period of these oscillations was found to depend on the FML thickness and the photon energy of the incident light. TKE spectra of the examined samples were discovered to modify very strongly with increasing $t_{NML}$. The discovered peculiarities of magneto-optical properties of thin-film systems were explained by a concept of the spin-polarized quantum well states in the pt and Pd layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.130-133
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• 2010

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance ($g_m$) and the drain conductance ($g_d$) increase with an increase in p-type counter-doping thickness ($T_c$). Very high value of transconductance ($g_m=38\;mS/{\mu}m$) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.