JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect of Counter-doping Thickness on Double-gate MOSFET Characteristics

  • George, James T. (Postgraduate and Research Department of Physics, St. Thomas College) ;
  • Joseph, Saji (Postgraduate and Research Department of Physics, St. Thomas College) ;
  • Mathew, Vincent (Postgraduate and Research Department of Physics, St. Thomas College)
  • Received : 2009.12.13
  • Published : 2010.06.30
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Abstract

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance ($g_m$) and the drain conductance ($g_d$) increase with an increase in p-type counter-doping thickness ($T_c$). Very high value of transconductance ($g_m=38\;mS/{\mu}m$) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.

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References

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