• Title/Summary/Keyword: Quantum Dot

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Interband optical properties in wide band gap group-III nitride quantum dots

  • Bala, K. Jaya;Peter, A. John
    • Advances in nano research
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    • v.3 no.1
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    • pp.13-27
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    • 2015
  • Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.

Current-Voltage Characterization of Silicon Quantum Dot Solar Cells

  • Kim, Dong-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.4
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    • pp.143-145
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    • 2009
  • The electrical and photovoltaic properties of single junction silicon quantum dot solar cells are investigated. A prototype solar cell with an effective area of 4.7 $mm^2$ showed an open circuit voltage of 394 mV and short circuit current density of 0.062 $mA/cm^2$. A diode model with series and shunt resistances has been applied to characterize the dark current-voltage data. The photocurrent of the quantum-dot solar cell was found to be strongly dependent on the applied voltage bias, which can be understood by consideration of the conduction mechanism of the activated carriers in the quantum dot imbedded material.

Magnetoconductance of a Hybrid Quantum Ring: Effects of Antidot Potentials

  • Kim, Nammee;Park, Dae-Han;Kim, Heesang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.335.1-335.1
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    • 2016
  • The electronic structures of a hybrid magnetic-electric quantum ring and two terminal conductance taking into account the resonant backscattering via both magnetic and electric edge channels are studied. The hybrid magnetic-electric quantum ring is formed by a magnetic quantum dot combined with an additional antidot electrostatic potential at the center of the dot. Electrons are both magnetically and electrically confined to the plane. The antidot potential repelling electrons from the center of the dot plays an important role in the energy spectra and magnetoconductance. The angular momentum transition in the ground state and the behavior of magnetoconductance due to a change of the antidot potential are shown in comparison with the conventional magnetic quantum dot.

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Formation of Quantum Dot Fluorescent Monolayer Film using Peptide Bond

  • Inami, Watau;Nanbu, Koichi;Miyakawa, Atsuo;Kawata, Yoshimasa
    • Transactions of the Society of Information Storage Systems
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    • v.8 no.1
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    • pp.1-5
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    • 2012
  • We present a method for preparing a quantum dot fluorescent monolayer film on a glass substrate. Since nanoparticles aggregate easily, it is difficult to prepare a nanoparticle monolayer film. We have used a covalent bond, the peptide bond, to fix quantum dots on the glass substrate. The surface of the quantum dot was functionalized with carboxyl groups, and the glass substrate was also functionalized with amino groups using a silane coupling agent. The carboxyl group can be strongly coupled to the amino group. We were able to successfully prepare a monolayer film of CdSe quantum dots on the glass substrate.

The Status of Research of Quantum dot Using 4P Analysis -Focusing on the application and convergence field of quantum technology (4P 분석을 통한 양자점 기술개발 현황 분석 -양자점 기술의 응용 및 융합 분야를 중심으로)

  • Heo, Na-Young;Ko, Young-Joo
    • Journal of the Korea Convergence Society
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    • v.6 no.2
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    • pp.49-55
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    • 2015
  • Quantum dot technology can be complementary application of the bulk material, and that a wide range of applications that can take advantage of the characteristic convergence technology. With the development of quantum dot technology, it is important to analyze Marketability of quantum technology, business opportunity. In this study, patents, papers, market, analysis of the project will be to investigate the quantum information research trends. Research results are expected to be used as a basis for research and development path setting and strategic planning of the quantum dot. In particular, this study found the performance of quantum dot research through patents and papers analyzed. In addition, fast-growing field, the field to lead the commercialization were derived. Compared to the advanced research and national research was to diagnose the domestic research into quantum dots.

Analysis of In/Ga Inter-Diffusion Effect on the Thermodynamical Properties of InAs Quantum Dot

  • Abdellatif, M.H.;Song, Jin Dong;Lee, Donghan;Jang, Yudong
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.158-161
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    • 2016
  • Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

Development of a High-performance COVID-19 Diagnostic Kit Employing Improved Antibody-quantum dot Conjugate

  • Seongsoo Kim;Hyunsoo Na;Hong-Geun Ahn;Han-Sam Park;Jaewoong Seol;Il-Hoon Cho
    • Biomedical Science Letters
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    • v.29 no.4
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    • pp.344-354
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    • 2023
  • This study emphasizes the importance of early diagnosis and response to COVID-19, leading to the development of a rapid diagnostic kit using quantum dots. The research focuses on finely tuning bioconjugation with quantum dots to enhance the accuracy and sensitivity of COVID-19 diagnosis. We have developed a COVID-19 rapid diagnostic kit that exhibits a sensitivity more than 50 times higher than existing COVID-19 diagnostic kits. Quantum dots enable the accurate detection of COVID-19 viral antigens even at low concentrations, providing a rapid response in the early stages of infection. The COVID-19 quantum dot diagnostic kit offers quick analysis time, utilizing the quantum properties of particles to swiftly measure COVID-19 infection for immediate response and isolation measures. Additionally, this diagnostic kit allows for multiple analyses with ease, as multiple quantum dots can detect various antigens and antibodies simultaneously in a single experiment. This efficiency enhances testing, reduces sample requirements, and lowers experimental costs. The application of this diagnostic technology is anticipated in the future for early diagnosis and monitoring of other infectious diseases.

Display using the CdSe/ZnS Quantum Dot (CdSe/ZnS 양자점을 이용한 디스플레이)

  • Cho, Su-Young;Song, Jin-Won
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.8
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    • pp.167-171
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    • 2014
  • While the development of a portable plate panel display, thinning, high color reproduction, high brightness studies have been actively performed. LED, OLED is used as a light source. The research on quantum dot is much accomplished by the material of light source. Such quantum dot is the next generation semiconductor nano fluorescent substance because quantum dot has the high color reproduction and flexible display characteristic. In this study, we presented to method of using the quantum dot for implementation of the plate panel display. Quantum Dot (CdSe/ZnS), having a 100um thickness, is spread in PET barrier film. A Blue LED having a wavelength of 455nm as a light source irradiating light to the optical characteristic of the devices produced and evaluated. Also we presented the possibility for application with the color change film of the LCD.

Design of Programmable Quantum-Dot Cell Structure Using QCA Clocking Based D Flip-Flop (QCA 클록킹 방식의 D 플립플롭을 이용한 프로그램 가능한 양자점 셀 구조의 설계)

  • Shin, Sang-Ho;Jeon, Jun-Cheol
    • Journal of Korea Society of Industrial Information Systems
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    • v.19 no.6
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    • pp.33-41
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    • 2014
  • In this paper, we propose a D flip-flop based on quantum-dot cellular automata(QCA) clocking and design a programmable quantum-dot cell(QPCA) structure using the proposed D flip-flop. Previous D flip-flops on QCA are that input should be set to an arbitrary value, and wasted output values exist because it was utilized to duplicate by clock pulse and QCA clocking. In order to eliminate these defects, we propose a D flip-flop structure using binary wire and clocking technique on QCA. QPCA structure consists of wire control logic, rule control logic, D flip-flop and XOR logic gate. In experiment, we perform the simulation of QPCA structure using QCADesigner. As the result, we confirm the efficiency of the proposed structure.

Thermoelectric Seebeck and Peltier effects of single walled carbon nanotube quantum dot nanodevice

  • El-Demsisy, H.A.;Asham, M.D.;Louis, D.S.;Phillips, A.H.
    • Carbon letters
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    • v.21
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    • pp.8-15
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    • 2017
  • The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).