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http://dx.doi.org/10.12989/anr.2015.3.1.013

Interband optical properties in wide band gap group-III nitride quantum dots  

Bala, K. Jaya (Department of Physics, GTN Arts College)
Peter, A. John (P.G & Research Department of Physics, Government Arts College)
Publication Information
Advances in nano research / v.3, no.1, 2015 , pp. 13-27 More about this Journal
Abstract
Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.
Keywords
oscillator strength; exciton; quantum dot;
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Times Cited By KSCI : 2  (Citation Analysis)
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1 Abbas, H. and Player, M. (2014), "Optical and electrical properties of undoped GaN films on sapphire substrate grown by metalorganic chemical vapor deposition", Nat. Sci., 12(5), 80.
2 Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, W.J. and Eastman, L.F. (2002), "Optical detection of 2DEG in GaN/AlGaN structures - high magnetic field studies", J. Phys. Cond. Matt., 14(13), 3399.   DOI
3 Ambacher, O., Majewski, J., Miskys, C., Link, A., Herman, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, B. and Eastman, L.F. (2001), "Intersubband optical transitions in nitride based group-III semiconductor quantum dots", J. Phys. Cond. Matt., 14, 3399.
4 Barve, A.V., Meesala, S., Sengupta, S., Kim, J.O., Chakrabarti, S. and Krishna, S. (2012), "Investigation of non-uniform electric field in intersubband quantum infrared photodetectors", Appl. Phys. Lett., 100, 191107.   DOI
5 Bernardini, F., Fiorentini, V. and Vanderbilt, D. (1997), "Spontaneous polarization and piezoelectric constants of III-V nitrides", Phys. Rev. B, 56(16), 10024.   DOI
6 Bhattacharya, P., Ghosh, S. and Stiff-Roberts, A.D. (2004), "Quantum dot optoelectronic devices", Annu. Rev. Mater. Res., 34, 1.   DOI
7 Bigenwald, P., Lefebvre, P., Bretagnon, T. and Gil, B. (1999), "Confined excitons in GaN$\pm$AlGaN quantum wells", Phys. Stat. Sol. B, 216, 371.   DOI
8 Bir, G.L. and Pikus, E. (1974), Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York.
9 Baer, N., Schulz, S., Schumacher, S., Gartner, P., Czycholl, G. and Jahnke, F. (2005), "Optical properties of self-organized wurtziteInN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation", Appl. Phys. Lett, 87, 231114.   DOI
10 Castrucc, P. (2014), "Nanotube-silicon heterojunction solar cells", Adv. Nano Res., 2(1), 23.   DOI
11 Cao, J.C., Lei, X.L., Li, A.Z. and Liu, H.C. (2001), "Spectrum dynamics of negative-effective-mass oscillators under a THz radiation", Appl. Phys. Lett., 78,2524.   DOI
12 de Sousa, J.S., Leburton, J.P., Freire, V.N. and da Silva, E.F. (2005), "Intraband absorption and stark effect in silicon nanocrystals", Phys. Rev. B, 72, 155438.   DOI
13 Fonoberov, V.A. and Balandin, A.A. (2004), "Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots", J. Vac. Sci. Technol. B, 22, 2190.   DOI
14 Haug, H. and Koch, S.W. (1994), Quantum Theory of the Optical Properties of Semiconductors, 3rd Edition, World Scientific, Singapore.
15 Fonoberov, V.A. and Balandin, A.A. (2004), "Radiative lifetime of excitons in ZnO nanocrystals: the dead-layer effect", Phys. Rev. B, 70, 195410.   DOI
16 Fonoberov, V.A. and Balandin, A.A. (2006), "ZnO quantum dots: properties andoptoelectronic applications", J. Nanoelectro. Optoelectro, 1, 19.   DOI
17 Fonoberov, V.A., Alim, K.A., Balandin, A.A., Xiu, F. and Liu, J. (2006), "Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals", Phys. Rev. B, 73,165317.   DOI   ScienceOn
18 Kohler, R.R. et al. (2002), "Terahertz semiconductor-heterostructure laser", Nature, 417, 156.   DOI
19 Koga, T., Nitta, J., Takayanagi, H. and Datta, S. (2002), "Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode", Phys. Rev. Lett., 88, 126601.   DOI
20 Kuhn, K.J., Lyengar, G.U. and Yee, S. (1991), "Nonlinear photonics: nonlinearities in optics, optoelectronics and fiber communication", J. Appl. Phys., 70, 5010.   DOI
21 Liu, H.C. (1999), "Quantum well infrared photodetector physics and novel devices, Intersubband Transitions in Quantum Wells Physics and Device Applications", Eds. Weber, E.R. and Willardson, R.K., Semiconductors and Semimetals, 62, Academic Press, San Diego.
22 Liu, H.C. et al. (2003), "Coupled electron-phonon modes in optically pumped resonant intersubband lasers", Phys. Rev. Lett., 90, 077402.   DOI
23 Nevou, L., Tchemycheva, M., Julien, F.H., Guillot, F. and Monroy, E. (2007), "Nano-semiconductors: devices and technology", Appl. Phys. Lett., 90, 121106.   DOI
24 Malis, O., Edmunds, C., Manfra, M.J. and Sivco, D.L. (2009), "Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices", Appl. Phys. Lett., 94, 16111.
25 Matthews, D.R., Summers, H.D., Smowton, P.M. and Hopkinson, M. (2002), "Ultrafast electron capture into p-modulation-doped quantum dots", Appl. Phys. Lett., 81,4904.   DOI
26 Meighan, A., Rostami, A. and Abbasian, K. (2014), "Quantum computing using applied electric field to quantum dots", Adv. Nano Res., 2(1), 15.   DOI
27 Nevou, L., Tchemycheva, M., Julien, F.H., Guillot, F., Monroy, E. and Sarigiannidou, E. (2008), "Intraband emission at lambda approximate to 1.48 $\mu{m}$ from GaN/AlN quantum dots at room temperature", Appl. Phys. Lett., 92, 161105.   DOI
28 Prete, P., Lovergine, N., Tapfer, L. and Mancini, A.M. (2001), "Structural properties of MOVPE-grown ZnMgSeepilayers and ZnSe/ZnMgSe MQWs on (100) GaAs", Opt. Mater., 17, 207.   DOI
29 Qu, F. and Morais, P.C. (2003), "The optical stark effect in semiconductor quantum wires", Phys. Lett. A, 310, 460.   DOI
30 Renard, J., Songmuang, R., Bougerol, C., Daudin, B. and Gayral, B. (2008), "Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires", Nanolett, 8(7), 2092.   DOI
31 Shi, J.J. and Gan, Z.Z. (2003), "Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots", J. Appl. Phys., 94, 407   DOI   ScienceOn
32 Teleb, H., Abedi, K. and Golmohammadi, S. (2011), "Operation of quantum-dot semiconductor optical amplifiers under non-uniform current injection", Appl. Opt., 50, 608.   DOI
33 Singh, J. (1996), Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor, An Introduction to Materials and Devices, Optoelectronics, Tata McGraw Hill, New Delhi.
34 Sun, K. et al. (2009), "Applications of colloidal quantum dots", Microelectronics J., 40, 644.   DOI
35 Sun, H.H., Guo, F.Y., Li, D.Y., Wang, L., Wang, D.B. and Zhao, L.C. (2012), "Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition", Nanoscale Res. Lett., 7, 649.   DOI
36 Tchelidze, T. and Kereselidze, T. (2004), "Exciton energies and probability of their radiative decay in GaN/AlN quantum structures", Opto-elect. Rev., 12(4), 441.
37 Voskoboynikov, O., Bauga, O., Lee, C.P. and Tretyak, O. (2003), "Magnetic properties of parabolic quantum dots in the presence of the spin-orbit Interaction", J. Appl. Phys., 94, 5891.   DOI
38 Vurgaftman, I., Meyer, J.R. and Ram-ohan, L.R. (2001), "Band parameters for III-V compound semiconductors and their alloys", J. Appl. Phys., 89, 5815.   DOI
39 Wang, G., Duan, X. and Chen, W. (2013), "Application and performance of 3d printing in nanobiomaterials", Nanomat., Article ID 240563.