• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.7
• /
• pp.705-711
• /
• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

• Journal of Microbiology
• /
• v.41 no.1
• /
• pp.1-6
• /
• 2003

The genetic relatedness of multidrug-resistant pneumococcal isolates of serotypes 19F and 23F was investigated. The DNA fragments digested with Sma I were resolved by pulsed-field gel electrophoresis (PFGE). PFGE analysis of 365. pneumoniae isolates showed 13 different patterns. Among 22 isolates of serotype 19F, 9 different PFGE patterns were present and 14 isolates of serotype 23F isolates represented 5 distinct PFGE patterns. Two isolates of serotype 19F and six isolates of serotype 23F shared the same PFGE pattern (Pattern I). Based on the genetic relatedness within the strains (one genetic cluster was defined as having more than 85% homology), we divided the pneumococcal strains into genefic clusters (Ⅰ, II, III, IV, V, and VI). The 22 strains of serotype 19F belonged to five distinct genetic clusters (I, II, III, IV, V and VI) and 14 strains of serotype 23F represented two genetic clusters (I and II ). These results showed that strains of serotype 19F are genetically more diverse than those of serotype 23F, Serotype 19F isolates with PFGE patterns H and I appeared to be less related to those of the remaining PFCE patterns (A to G) (less than 60% genetic relatedness), but those strains were genetically closely related with serotype 23f. These results suggest that the latter isolates originated from horizontal transfer of the capsular type 19F gene locus to 23F pneumococcal genotypes. In conclusion, the multidrug-resistant pneumococcal isolates of serotype 19f and 23F isolated in Korea are the result of the spread of a limited number of resistant clones.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.1
• /
• pp.27-33
• /
• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.6
• /
• pp.411-418
• /
• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of the Korean institute of surface engineering
• /
• v.45 no.4
• /
• pp.168-173
• /
• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.1
• /
• pp.88-99
• /
• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.5
• /
• pp.419-424
• /
• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.5
• /
• pp.69-76
• /
• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.234-234
• /
• 2013

The counter electrodes in dye-sensitized solar cells (DSSCs) play roles in not only collecting electrons from external circuit but also reducing I3- to I- in electrolytes. Generally, conventional counter electrodes for DSSCs are prepared from the high temperature treatment of the H2PtCl6 precursor solution at $400^{\circ}C$ However, the more simplified fabrication process of counter electrodes is required for the commercialization of DSSCs. In this work, we developed novel fabrication process of counter electrodes using nano-second pulsed laser. DSSCs employing counter electrodes prepared by laser process showed conversion efficiency of 6.75% with short-circuit current of 12.73 mA/cm2, open-circuit voltage of 0.74 V and fill factor of 0.72. Closer investigating of photovoltaic properties will be reported.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1609-1611
• /
• 2001

A large cross-section pulsed electron beam generator of cold cathode type has been developed for industrial applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The conventional electron beam generators need an electron scanning beam because the small cross section thermal electron emitter is used. The electron beam of large cross-section pulsed electron beam generator do not need to be scanned over target material because the beam cross section is large by 300$cm^2$. We have fabricated the large cross-sectional pulsed electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large area electron beam in the air. The electron beam current has been investigated as a function of accelerating voltage, glow discharge current, helium pressure, distance from the exit window and radial distribution in front of the exit window.