Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Pulsed Magnetron Sputtering Deposit ion of DLC Films Part I : Low-Voltage Bias-Assisted Deposition

  • Oskomov, Konstantin V. (Inst. of High Current Electronics, Siberian Div. of RAS) ;
  • Chun, Hui-Gon (School of Materials Science and Engineering, ReMM, University of Ulsan) ;
  • You, Yong-Zoo (School of Materials Science and Engineering, ReMM, University of Ulsan) ;
  • Lee, Jing-Hyuk (School of Materials Science and Engineering, ReMM, University of Ulsan) ;
  • Kim, Kwang-Bok (School of Materials Science and Engineering, ReMM, University of Ulsan) ;
  • Cho, Tong-Yul (School of Materials Science and Engineering, ReMM, University of Ulsan) ;
  • Sochogov, Nikolay S. (Inst. of High Current Electronics, Siberian Div. of RAS) ;
  • Zakharov, Alexender N. (Inst. of High Current Electronics, Siberian Div. of RAS)
  • Published : 2003.02.01
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Abstract

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

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References

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