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http://dx.doi.org/10.5573/ieie.2016.53.5.069

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor)  

Park, Kun-Sik (ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute)
Cho, Doohyung (Department of Electronic Engineering, Sogang University)
Won, Jong-Il (ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute)
Kwak, Changsub (Hanwha Corporation)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.53, no.5, 2016 , pp. 69-76 More about this Journal
Abstract
Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.
Keywords
MOS Controlled Thyristor; MCT; Thyristor; Power device; Pulsed power system;
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1 B. E. Fridman, A. A. Drozdov, V. G. Kuchinski, V. Th. Prokopenko, and V. V. Vesnin, "5 KV, 300 KJ Capacitive Energy Storage," IEEE Pulsed Power Conference, pp. 704-707, Monterey Conference Center Monterey, USA, Jul. 2005.
2 C. Fahrni, A. Rufer, F. Bordry, and JP. Burnet, "A novel 60 MW Pulsed Power System based on Capacitive Energy Storage for Particle Accelerators" Proceeding of European Conference on Power Electronics and Applications, pp. 1, Aalborg, Denmark, Sep. 2007.
3 S. Huang, G. A. J. Amaratunga, and F. Udrea, "A Novel Single Gate MOS Controlled Current Saturated Thyristor" IEEE Electron Device Letters, Vol. 22, No. 9, pp. 438-440, 2001.   DOI
4 Q. Huang, G. A. J. Amaratunga, E. M. Sankara Narayanan, and W. I. Milne, "Analysis of n-Channel MOS-Controlled Thyristors" IEEE Electron Device Letters, Vol. 38, No. 7, pp. 1612-1618, 1991.   DOI
5 W.-J. Chen, R.-Z. Sun, C.-F. Peng, and B. Zhang, "High dV/dt immunity MOS Controlled Thyristor using a Double Variable Lateral Doping Technique for Capacitor Discharge Applications" Chinese Physics, Vol. 23, No. 7, pp. 1-6, 2014.
6 Malay Trivedi, S. Pendharkar, and K. Shenai, "Switching Characteristics of MCT's and IGBT's in Power Converters" IEEE Transactions On Electron Devices, Vol. 43, No. 11, pp. 1994-2003, 1996.   DOI