• 제목/요약/키워드: Pseudo

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Pseudo Jacket 행렬을 이용한 MIMO SVD Channel (Pseudo Jacket Matrix and Its MIMO SVD Channel)

  • 양재승;김정수;이문호
    • 한국인터넷방송통신학회논문지
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    • 제15권5호
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    • pp.39-49
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    • 2015
  • Jacket Matrices: Construction and Its Application for Fast Cooperative Wireless signal Processing[27]에 소개된 Jacket 행렬로부터 일반화된 의사 Jacket 행렬에 대한 특성과 생성에 관한 정리가 발표됐다. 본 논문에서는 MIMO 채널과 같이 $2{\times}4$, $3{\times}6$ 같은 비정방 행렬에서의 의사 Jacket 역행렬에 대한 예제를 제안했다. 또한 의사 MIMO 특이값 분해 (SVD, Singular Value Decomposition) channel을 추론하여 적용하였으며 안테나 어레이를 분할하여 추정하는 채널을 기반으로 SVD를 활용하는데 적용하였다. 이것은 MIMO 채널 및 고유값 분해 (EVD, Eigen Value decomposition) 등에 사용할 수 있다.

Pseudo MOSFET을 이용한 Nano SOI 웨이퍼의 전기적 특성분석 (Electrical Characterization of Nano SOI Wafer by Pseudo MOSFET)

  • 배영호;김병길;권경욱
    • 한국전기전자재료학회논문지
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    • 제18권12호
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    • pp.1075-1079
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    • 2005
  • The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

Pseudo-MOSFET을 이용한 nano SOI 웨이퍼의 전기적 특성분석 (Electrical Characterization of nano SOl wafer by Pseudo MOSFET)

  • 배영호;김병길;권경욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.3-4
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    • 2005
  • The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

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SPECTRA ORIGINATED FROM FREDHOLM THEORY AND BROWDER'S THEOREM

  • Amouch, Mohamed;Karmouni, Mohammed;Tajmouati, Abdelaziz
    • 대한수학회논문집
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    • 제33권3호
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    • pp.853-869
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    • 2018
  • We give a new characterization of Browder's theorem through equality between the pseudo B-Weyl spectrum and the generalized Drazin spectrum. Also, we will give conditions under which pseudo B-Fredholm and pseudo B-Weyl spectrum introduced in [9] and [25] become stable under commuting Riesz perturbations.

A NOTE ON MULTILINEAR PSEUDO-DIFFERENTIAL OPERATORS AND ITERATED COMMUTATORS

  • Wen, Yongming;Wu, Huoxiong;Xue, Qingying
    • 대한수학회보
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    • 제57권4호
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    • pp.851-864
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    • 2020
  • This paper gives a sparse domination for the iterated commutators of multilinear pseudo-differential operators with the symbol σ belonging to the Hörmander class, and establishes the quantitative bounds of the Bloom type estimates for such commutators. Moreover, the Cp estimates for the corresponding multilinear pseudo-differential operators are also obtained.

ALEXANDROV TOPOLOGIES AND NON-SYMMETRIC PSEUDO-METRICS

  • Oh, Ju-mok;Kim, Yong Chan
    • 한국수학교육학회지시리즈B:순수및응용수학
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    • 제27권3호
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    • pp.125-135
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    • 2020
  • In this paper, we investigate the properties of Alexandrov topologies, non-symmetric pseudo-metrics and lower approximation operators on [0, ∞]. Moreover, we investigate the relations among Alexandrov topologies, non-symmetric pseudo-metrics and lower approximation operators. We give their examples.

MODIFIED MANN'S ALGORITHM BASED ON THE CQ METHOD FOR PSEUDO-CONTRACTIVE MAPPINGS

  • Yao, Yonghong;Zhou, Haiyun;Liou, Yeong-Cheng
    • Journal of applied mathematics & informatics
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    • 제28권5_6호
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    • pp.1499-1506
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    • 2010
  • IIn this paper, we suggest and analyze a modified Mann's algorithm based on the CQ method for pseudo-contractive mappings in Hilbert spaces. Further, we prove a strong convergence theorem according to the proposed algorithm for pseudo-contractive mappings.

SHARP FUNCTION AND WEIGHTED $L^p$ ESTIMATE FOR PSEUDO DIFFERENTIAL OPERATORS WITH REDUCED SYMBOLS

  • Kim, H.S.;Shin, S.S.
    • East Asian mathematical journal
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    • 제6권2호
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    • pp.133-144
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    • 1990
  • In 1982, N. Miller [5] showed a weighted $L^p$ boundedness theorem for pseudo differential operators with symbols $S^0_{1.0}$. In this paper, we shall prove the pointwise estimates, in terms of the Fefferman, Stein sharp function and Hardy Littlewood maximal function, for pseudo differential operators with reduced symbols and show a weighted $L^p$-boundedness for pseudo differential operators with symbol in $S^m_{\rho,\delta}$, 0{$\leq}{\delta}{\leq}{\rho}{\leq}1$, ${\delta}{\neq}1$, ${\rho}{\neq}0$ and $m=(n+1)(\rho-1)$.

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