1 |
Y. H. Bae, W. J. Zang, S. H. Hahm, J H. Lee, and J. H. Lee, 'Nano gap fabrication by thermal stress cleavage on SIMOX SOl for lateral FED application', The 10th Proc. Int. Syrnp. Silicon-on-Insulator Technology and Devices, The Electrochemical Soc., p. 445, 2001
|
2 |
장재원, 김 훈, 신경식, 김재경, 주병권, 'SOI 웨이퍼를 이용한 top emission 방식 AMOLEDs 의 스위칭 소자용 단결정 실리콘 트랜지스터', 전기전자재료학회논문지, 16권, 4호, p. 291, 2003
|
3 |
김종준, 정두연, 이종호, 오환술, 'SOl NMOSFET 을 이용한 photo detector의 특성', 전기전자재료학회논문지, 15권, 7호, p. 583, 2002
|
4 |
Y. H. Bae, K. W. Kwon, J. H. Lee, J. H. Lee, H. J. Woo, and S. Cristoloveanu, 'Effects of etching processes on the properties of pseudo-MOSFETs for the UTSOI characterization', The 12th Proc. Int. Symp. Siliconon-Insulator Technology and Devices, The Electrochemical Soc., p. 295, 2005
|
5 |
S. Cristoloveanu., D. Munteanu., and M. S. T. Liu, 'A review of the pseudo-MOS transistor in SOl wafers: operation, parameter extraction, and applications', IEEE Transactions on Electron Devices, Vol. 47, No.5, p. 1018, 2000
|
6 |
H. Hovel, 'Si film electrical characterization in SOl substrates by the HgFET technique', Solid State Electronics, Vol. 47, No.6, p. 1311, 2003
|
7 |
J. Y. Choi and D. K. Schroder, 'Mercury pseudo MOSFET (HgFET) drain current dependence on surface treatment', The 12th Proc. Int. Symp. Silicon-an-Insulator Technology and Devices, The Electrochemical Soc., p. 301, 2005
|
8 |
N. Bresson and S. Cristoloveanu, 'Innovating SOl films: impact of thickness and temperature', Microelectronic Engineering, Vol. 72, p. 357, 2004
|
9 |
권경욱, 이종현, 유인식, 우형주, 배영호, 'Pseudo-MOSFET을 이용한 SOl wafer 특성 분석', 한국전기전자재료학회 2004추계학술대회논문집, p. 21, 2004
|