• 마이크로전자및패키징학회지
• /
• 제26권4호
• /
• pp.7-13
• /
• 2019

Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

• 반도체디스플레이기술학회지
• /
• 제18권4호
• /
• pp.149-153
• /
• 2019

The technology of electronic packaging among semiconductor technologies is evolving as an axis of the market in its own field beyond the simple assembly process of the past. In the field of electronic packaging technology, the packaging of power modules plays an important role for green electric vehicles. In this power module packaging, the thermal reliability is an important factor, and silicon nitride plays an important part of package substrates, Silicon nitride is a compound that is not found in nature and is made by chemical reaction between silicon and nitrogen. In this study, this core material, silicon nitride, was fabricated by reaction bonded silicon nitride. The fabricated silicon nitride was studied for thermo-mechanical properties, and through this, the structure of power module packaging was made using reaction bonded silicon nitride. And the characteristics of stress were evaluated using finite element analysis conditions. Through this, it was confirmed that reaction bonded silicon nitride could replace the silicon nitride as a package substrate.

• Journal of international Conference on Electrical Machines and Systems
• /
• 제2권4호
• /
• pp.441-446
• /
• 2013

A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

• 마이크로전자및패키징학회지
• /
• 제21권2호
• /
• pp.13-21
• /
• 2014

Technology for high power devices has made impressive progress in increasing the current density of power semiconductor, system module, and design optimization, which realize high power systems with heterogeneous functional integration. Depending on the performance development of high power semiconductor, packaging technology of high power device is urgently required for efficiency improvement of the device. Power device packaging must provide superior thermal management due to high operating temperature of power modules. Here we, therefore, review critical challenges of typical power electronics packaging today including core assembly processes, component materials, and reliability evaluation regulations.

• 마이크로전자및패키징학회지
• /
• 제30권1호
• /
• pp.1-16
• /
• 2023

전기차용 전력변환모듈의 성능향상 요구와 종래의 Si 전력반도체의 한계 극복을 위해 차세대 전력반도체인 wide-bandgap (WBG) 기반 전력반도체로의 전환이 가속화되고 있다. WBG 전력반도체로의 전환을 위해 전력변환모듈 패키징 소재 역시 높은 고온 내구성을 요구받고 있다. 전력변환모듈 패키징 공정 중 하나인 Ag 소결 다이접합 기술은 종래의 고온용 Pb 솔더링의 대체 기술로 주목받고 있다. 본 논문에서는 Ag 소결 다이접합 기술 관련 최신 연구동향에 대해 소개하고자 한다. 소결 다이접합 공정 조건에 따른 접합부 특성을 비교하고 Ag 소결층의 3차원 이미지 구현에 따른 다공성 Ag 소결 접합부의 물성 측정 방법론에 대해 고찰하였다. 또한 열충격 및 파워사이클 신뢰성 평가 연구동향을 분석하였다.

• 마이크로전자및패키징학회지
• /
• 제24권1호
• /
• pp.17-25
• /
• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• 마이크로전자및패키징학회지
• /
• 제24권1호
• /
• pp.27-34
• /
• 2017

Recently, a demand in sustainable green technologies is requiring the lead free bonding for high power module packaging due to the environmental pollution. The Transient-liquid phase (TLP) bonding can be a good alternative to a high Pb-bearing soldering. Basically, TLP bonding is known as the combination of soldering and diffusion bonding. Since the low melting temperature material is fully consumed after TLP bonding, the remelting temperature of joint layer becomes higher than the operating temperature of the power module. Also, TLP bonding is cost-effective process than metal nanopaste bonding such as Ag. In this paper, various TLP bonding techniques for power semiconductor were described.

• 마이크로전자및패키징학회지
• /
• 제26권3호
• /
• pp.15-22
• /
• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.826-831
• /
• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• 마이크로전자및패키징학회지
• /
• 제25권4호
• /
• pp.9-15
• /
• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.