1 |
N. Dharmarasu, "AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD", Electron Devices Technology and Manufacturing Conference(EDTM), 434 (2019).
|
2 |
S. S. Moosavi, A. Kazemi, and H. Akbari, "A comparison of various open-circuit fault detection methods in the IGBTbased DC/AC inverter used in electric vehicle", Engineering Failure Analysis, 96, 223 (2019).
DOI
|
3 |
X. Liang, S. Srdic, J. Won, E. Aponte, K. Booth, and S. Lukic, "A 12.47 kV Medium Voltage Input 350 kW EV Fast Charger using 10 kV SiC MOSFET", 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 581 (2019).
|
4 |
F. Roccaforte, A. Frazzetto, G. Greco, F. Giannazzo, P. Fiorenza, R. L. Nigro, M. Saggio, M. Leszczynski, P. Pristawko, and V. Raineri, "Critical issues for interfaces to p-type SiC and GaN in power devices", Applied Surface Science, 258(21), 8324 (2012).
DOI
|
5 |
J. W. Yoon, J. H. Bang, Y. H. Ko, S. H. Yoo, J. K. Kim, and C. W. Lee, "Power Module Packaging Technology with Extended Reliability for Electric Vehicle Applications", J. Microelectron. Packag. Soc., 21(4), 1 (2014).
DOI
|
6 |
P. Roussel, "SiC Market and Industry Update", International SiC Power", Electronics Applications Workshop (ISiCPEAW), Sweden (2011).
|
7 |
K. Shenai, M. Dudley, and R.F. Davis, "Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices", ECS J. Solid State Science and Technology, 2(8), 3055 (2013).
DOI
|
8 |
J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, "A survey of wide bandgap power semiconductor devices," IEEE Transactions on Power Electronics, 29(5), 2155 (2014).
DOI
|
9 |
S. J. Pearton, J. Yang, P. H. Cary IV, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, "A review of materials, processing, and device", Applied Physics Reviews, 5(1), 011301 (2018).
DOI
|
10 |
D. J. Spry, P. G. Neudeck, L. Chen, D. Lukco, C. W. Chang, and G. M. Beheim, "Prolonged 500oC demonstration of 4HSiC JFET ICs with two-level interconnect", IEEE Electron Device Letters, 37(5), 625 (2016).
DOI
|
11 |
T. P. Chow, "Wide bandgap semiconductor power devices for energy efficient systems", Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 402 (2015).
|
12 |
S. S. Kang, "Advanced cooling for power electronics", IEEE International conference on integrated power electronics systems (CIPS), 1 (2012).
|
13 |
S. Dimitrijev, and P. Jamet, "Advances in SiC power MOSFET technology", Microelectronics Reliability, 43(2), 225 (2003).
DOI
|
14 |
F. Zimmermann, G.Gartner, H. Strater, C. Roder, M. Barchuk, D. Bastin, P. Hofmann, M. Krupinski, T. Mikolajick, J. Heitmann, and F. C. Beyer, "Green coloring of GaN single crystals introduced by Cr impurity", J. Luminescence, 207, 507 (2019).
DOI
|
15 |
T. Kimura, S. Sato, K. Kataoka, T. Morikawa, and D. Nakamura, "Self-assembled single-crystalline GaN having a bimodal meso/macropore structure to enhance photoabsorption and photocatalytic reactions", ACS applied materials & interfaces, 11(4), 4233 (2019).
DOI
|
16 |
M. H. Roh, H. Nishikawa, and J. P. Jung, "Trasient Liquid Phase bonding for Power Semiconductor", J. Microelectron. Packag. Soc., 24(1), 27 (2017).
DOI
|
17 |
K. Chu, Y. Sohn, and C. Moona, "A comparative study of Cn/Sn/Cu and Ni/Sn/Ni solder joints for low temperature stable transient liquid phase bonding", Scripta Materialia, 109, 113 (2015).
DOI
|
18 |
F. Ren, J. C. Yang, C. Fares, and S. J. Pearton, "Device processing and junction formation needs for ultra-high power electronics", MRS Communications, 9(1), 77 (2019).
DOI
|
19 |
J. Yang, C. Fares, R. Elhassani, M. Xian, F. Ren, S. J. Pearton, M. Tadjer, and A. Kuramata, "Reverse breakdown in large area, field-plated, vertical rectifiers", ECS Journal of Solid State Science and Technology, 8(7), 3159 (2019).
DOI
|
20 |
J. K. Mun, K. Cho, W. Chang, H. -W. Jung, and J. Do, "2.32 kV Breakdown voltage lateral MOSFETs with source-connected field plate", ECS Journal of Solid State Science and Technology, 8(7), 3079 (2019).
DOI
|
21 |
H. Tatsumi, A. Lis, T. Monodane, H. Yamaguchi, Y. Kashiba, and A. Hirose, "Transient liquid phase sintering using Copper-Solder-Resin composite for high-temperature power modules", IEEE Electronic Components and Technology Conference (ECTC), 564 (2018).
|
22 |
H. Tatsumi, A. Lis, H. Yamaguchi, T. Matsuda, T. Sano, Y. Kashiba, and A. Hirose, "Evolution of transient liquid-phase sintered Cu-Sn skeleton microstructure during thermal aging", Applied Sciences, 9(1), 157 (2019).
DOI
|
23 |
D. Mu, H. Huang, S. D. McDonald, and K. Nogita, "Creep and mechanical properties of and at elevated temperatures", Journal of electronic materials, 42(2), 304 (2013).
DOI
|
24 |
H. Feng, J. Huang, J. Yang, S. Zhou, R. Zhang, and S. Chen, "A transient liquid phase sintering bonding process using nickel-tin mixed powder for the new generation of high-temperature power devices", Journal of Electronic Materials, 46(7), 4152 (2017).
DOI
|
25 |
A. Kar, and A. K. Ray, "Ceramic-Metal Joining Using Active Filler Alloy-An In-Depth Electron Microscopic Study", The Transmission Electron Microscope, 317 (2012).
|
26 |
T. Ishizaki, M. Usui, and Y. Yamada, "Thermal cycle reliability of Cu-nanoparticle joint", Microelectronics Reliability, 55(9-10), 1861 (2015).
DOI
|
27 |
M. Ali, K. M. Knowles, P. M. Mallinson, and J. A. Fernie, "Microstructural evolution and characterisation of interfacial phases in braze joints", Acta Materialia, 96, 143 (2015).
DOI
|
28 |
I. Krasniy, A. Berkin, G. Minskiy, A. Denisova, and S. Kumacheva, "Research of the DBC joining interface", International Forum on Strategic Technology (IFOST), 185 (2016).
|
29 |
J. H. Harris, "Sintered aluminum nitride ceramics for highpower electronic applications", The Journal of The Minerals, Metals & Materials Society(TMS), 50(6), 56 (1998).
DOI
|
30 |
L. Sim, S. R. Ramanan, H. Ismail, K. N. Seetharamu, and T. J. Goh, "Thermal characterization of and ZnO reinforced silicone rubber as thermal pads for heat dissipation purposes", Thermochimica acta, 430(1-2), 155 (2005).
DOI
|
31 |
X. Huang, P. Jiang, and T. Tanaka, "A review of dielectric polymer composites with high thermal conductivity", IEEE Electrical Insulation magazine, 27(4), 8 (2011).
DOI
|
32 |
K. Hirao, Y. Zhou, H. Hyuga, T. Ohji, and D. Kusano, "High thermal conductivity silicon nitride ceramics", Journal of the Korean Ceramic Society, 49(4), 380 (2012).
DOI
|
33 |
I. W. Suh, H. S. Jung, Y. H. Lee, Y. H. Kim, and S. H. Choa, "Heat dissipation technology of IGBT module package", J. Microelectron. Packag. Soc., 21(3), 7 (2014).
DOI
|
34 |
Y. Wang, S. Jones, A. Dai, and G. Liu, "Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles", Microelectronics Reliability, 54(9-10), 1911 (2014).
DOI
|
35 |
A. Uhlemann, and T. Fath, "Investigation on AlCu clad base plates and a new by-pass cooler concept for pin fin power modules", International Conference on Integrated Power Electronics Systems (CIPS), 256 (2014).
|
36 |
C. Qian, A. M. Gheitaghy, J. Fan, H. Tang, B. Sun, H. Ye, and G. Zhang, "Thermal management on IGBT power electronic devices and modules", IEEE Access, 6, 12868 (2018).
DOI
|
37 |
J. P. Gwinn, and P. L. Webb, "Performance and testing of thermal interface materials", Microelectronics Journal, 34(3), 215 (2003).
DOI
|
38 |
A. J. George, M. Breitenbach, J. Zipprich, M. Klingler, and M. Nowottnick, "Nonconchoidal Fracture in Power Electronics Substrates due to Delamination in Baseplate Solder Joints", IEEE Electronic System-Integration Technology Conference(ESTC), 1 (2018).
|
39 |
"Material Properties Charts", Ceramic Industry Magazine (2013) from https://www.ceramicindustry.com
|