• Title/Summary/Keyword: Power comparator

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A 4x Time-Domain Interpolation 6-bit 3.4 GS/s 12.6 mW Flash ADC in 65 nm CMOS

  • Liu, Jianwei;Chan, Chi-Hang;Sin, Sai-Weng;U, Seng-Pan;Martins, Rui Paulo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.395-404
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    • 2016
  • A 6-bit 3.4 GS/s flash ADC in a 65 nm CMOS process is reported along with the proposed 4x time-domain interpolation technique which allows the reduction of the number of comparators from the conventional $2^N-1$ to $2^{N-2}$ in a N-bit flash ADC. The proposed scheme effectively achieves a 4x interpolation factor with simple SR-latches without extra clocking and calibration hardware overhead in the interpolated stage where only offset between the $2^{N-2}$ comparators needs to be calibrated. The offset in SR-latches is within ${\pm}0.5$ LSB in the reported ADC under a wide range of process, voltage supply, and temperature (PVT). The design considerations of the proposed technique are detailed in this paper. The prototype achieves 3.4 GS/s with 5.4-bit ENOB at Nyquist and consumes 12.6 mW power at 1 V supply, yielding a Walden FoM of 89 fJ/conversion-step.

Design of a Full-Wave Rectifier with Vibration Detector for Energy Harvesting Applications (에너지 하베스팅 응용을 위한 진동 감지기가 있는 전파정류 회로 설계)

  • Ka, Hak-Jin;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.10a
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    • pp.421-424
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    • 2017
  • This paper describes a full-wave rectifiers for energy harvesting circuit using vibration detector. The designed circuit operates only when the vibration is detected through the vibration detector and the active diode. When there is no vibration, the comparator is turned off to prevent leakage of energy stored in the $C_{STO}$. The energy stored in the capacitor is used to drive the level converter and the active diode. The energy stored in the capacitor is supplied to an active diode designed as an output power. The vibration detector is implemented with Schmitt Trigger and Peak Detector with Hysteresis function. The proposed circuit is designed in a CMOS 0.35um technology and its functionality has been verified through extensive simulations. The designed chip occupies $590{\mu}m{\times}583{\mu}m$.

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Design of 6-bit 800 Msample/s DSDA A/D Converter for HDD Read Channel (HDD 읽기 채널용 6-bit 800 Msample/s DSDA 아날로그/디지털 변환기의 설계)

  • Jeong, Dae-Yeong;Jeong, Gang-Min
    • The KIPS Transactions:PartA
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    • v.9A no.1
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    • pp.93-98
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    • 2002
  • This paper introduces the design of high-speed analog-to-digital converter (ADC) for hard disk drive (HDD) read channel applications. This circuit is bated on fast regenerative autozero comparator for high speed and low-error rate comparison operation, and Double Speed Dual ADC (DSDA) architecture for efficiently increasing the overall conversion speed of ADC. A new type of thermometer-to-binary decoder appropriate for the autozero architecture is employed for no glitch decoding, simplifying the conventional structure significantly. This ADC is designed for 6-bit resolution, 800 Msample/s maximum conversion rate, 390 mW power dissipation, one clock cycle latency in 0.65 m CMOS technology.

Design of a Capacitive Detection Circuit using MUX and DLC based on a vMOS (vMOS 기반의 DLC와 MUX를 이용한 용량성 감지회로)

  • Jung, Seung-Min
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.11 no.4
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    • pp.63-69
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    • 2012
  • This paper describes novel scheme of a gray scale capacitive fingerprint image for high-accuracy capacitive sensor chip. The typical gray scale image scheme used a DAC of big size layout or charge-pump circuit of non-volatile memory with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit of charge sharing scheme is proposed, which uses DLC(down literal circuit) based on a neuron MOS(vMOS) and analog simple multiplexor. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, a pixel layout size can be reduced and the image resolution can be improved.

A Study on The Design of China DSRC System SoC (중국형 DSRC 시스템 SoC 설계에 대한 연구)

  • Shin, Dae-Kyo;Choi, Jong-Chan;Lim, Ki-Taeg;Lee, Je-Hyun
    • 전자공학회논문지 IE
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    • v.46 no.4
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    • pp.1-7
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    • 2009
  • The final goal of ITS and ETC will be to improve the traffic efficiency and mobile safety without new road construction. DSRC system is emerging nowadays as a solution of them. China DSRC standard which was released in May 2007 has low bit rate, short message and simple MAC control. The DSRC system users want a long lifetime over 1 year with just one battery. In this paper, we propose the SoC of very low power consumption architecture. Several digital logic concept and analog power control logics were used for very low power consumption. The SoC operation mode and clock speed, operation voltage range, wakeup signal detector, analog comparator and Internal Voltage Regulator & External Power Switch were designed. We confirmed that the SoC power consumption is under 8.5mA@20Mhz, 0.9mA@1Mhz in active mode, and under 5uA in power down mode, by computer simulation. The design of SoC was finished on Aug. 2008, and fabricated on Nov. 2008 with $0.18{\mu}m$ CMOS process.

A Selective Current-supplying Parallel A/D Converter (선택적 전류공급구조를 갖는 병렬형 A/D 변환기)

  • Yang, Jung-Wook;Kim, Ook;Kim, Won-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.12
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    • pp.1983-1993
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    • 1993
  • A power-reduction technique for full-flash A/D converters is proposed. As the resolution of a full-flash A/D converter increases linearly, the number of comparators increases exponentially. The power dissipation is generally larger than other A/D converter architectures because there are many comparators, and they are operating continuously. In this proposed architecture, only a selected number of conmarators are made to operate instead of activating all the comparators of the full-flash A/D convertor. To determine whichcomparators should be activated, voltage levelfider circuits are used. A new clock driver is developed to suppress the dynamic glitch noise which is fed back into the input stage of the comparator. By using this clock driver, the glitch noise in the current source is reduced to one fourth of that when the typical clock signal is applied. The proposed architecture has been implemented with 1.2 m 5GHz BiCMOS technology. The maximum conversion speed is 350Msamples/s. and dissipates only 900mW.

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A 2.5V 0.25㎛ CMOS Temperature Sensor with 4-bit SA ADC (4-비트 축차근사형 아날로그-디지털 변환기를 내장한 2.5V 0.25㎛ CMOS 온도 센서)

  • Kim, Mungyu;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.378-384
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    • 2013
  • In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

A Design of Full-wave Rectifier for Measurement Instrument (계측기용 새로운 전파정류 회로 설계)

  • Bae Sung-Hoon;Lim Shin-Il
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.43 no.4 s.310
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    • pp.53-59
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    • 2006
  • This paper describes the new design technique of full wave rectifier (FWR) for precise measurement instrument and the chip implementation of this FWR circuit with measurement results. Conventional circuits have some problems of complex design and limited output range( $VDD/2{\sim}VLIIV1IT+$). Proposed FWR circuit was simply designed with two 2x1 MUXs, one high speed comparator, and one differential difference amplifier(DDA). One rail-to-rail differential difference amplifier(DDA) performs the DC level shifting to VSS and 2X amplification simultaneously, and enables the full range ($Vss{\sim}VDD$) operation. The proposed FWR circuits shows more than 50% reduction of chip area and power consumption compared to conventional one. Proposed circuit was implemented with 0.35um 1-poly 2-metal CMOS process. Core size is $150um{\times}450um$ and power dissipation is 840uW with 3.3V single supply.

Binary CNN Operation Algorithm using Bit-plane Image (비트평면 영상을 이용한 이진 CNN 연산 알고리즘)

  • Choi, Jong-Ho
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.12 no.6
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    • pp.567-572
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    • 2019
  • In this paper, we propose an algorithm to perform convolution, pooling, and ReLU operations in CNN using binary image and binary kernel. It decomposes 256 gray-scale images into 8 bit planes and uses a binary kernel consisting of -1 and 1. The convolution operation of binary image and binary kernel is performed by addition and subtraction. Logically, it is a binary operation algorithm using the XNOR and comparator. ReLU and pooling operations are performed by using XNOR and OR logic operations, respectively. Through the experiments to verify the usefulness of the proposed algorithm, We confirm that the CNN operation can be performed by converting it to binary logic operation. It is an algorithm that can implement deep running even in a system with weak computing power. It can be applied to a variety of embedded systems such as smart phones, intelligent CCTV, IoT system, and autonomous car.

A 6b 1.2 GS/s 47.8 mW 0.17 mm2 65 nm CMOS ADC for High-Rate WPAN Systems

  • Park, Hye-Lim;Kwon, Yi-Gi;Choi, Min-Ho;Kim, Young-Lok;Lee, Seung-Hoon;Jeon, Young-Deuk;Kwon, Jong-Kee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.95-103
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    • 2011
  • This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.