• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.3 s.357
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• pp.92-97
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• 2007

Switching mode amplifiers have been studied widely for use at microwave frequency range, and the class E amplifier which is a type of switching mode amplifier offers very high efficiency approaching 100%. In this paper, 2.4GHz microwave class E amplifier with 66% power added efficiency (PAE) and 17.6dBm output has been linearized for use at wireless LAN transmitter, and digital predistortion technique with look up table is applied. With -3dBm input power of wireless LAN, measured output spectrum can meet the required IEEE 802.11g standard spectrum mask, and the digital predistortion output spectrum has been improved by 5dB of ACPR at 20MHz offset from center frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.693-695
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• 2015

The design and implementation of a broadband and linear HPA for TVWS are presented in this paper. The spectrum mask and transmitted power of HPAs for TVWS must be controlled and meet the regulations to minimize interference effects on the present broadcasting systems. The implemented HPA has the operating frequency of 470 ~ 698MHz with the maximum 48.63dB and minimum 43.45dB gain, input reflection coefficient of below -21.32dB, output reflection coefficient of below -4.29dB and the linearity of -45.24dBc at 28.79dBm output power.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.223-223
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• 1999

PZT(PbZr1-xTixO3) 박막은 고유전율과 같은 remanent polarization을 가져서 고집적 소자의 커패시터 유전율층 또는 비휘발성 메모리 소자의 제조에 이용되고 있으나, fatigue 와 aging 문제로 인하여 새로운 물질의 개발이 필요한데, 그 대표적으로 연구되고 있는 것이 PMN-PT(Pb(Mg1/3Nb2/3)O-PbTiO3) 이다. 본 실험에서는 sol-gel 법에 의하여 제조된 PMN-PT막을 ICP(Inductively coupled plasma)에 의하여 식각하였고 mask층으로는 PR을 사용하였다. 식각 가스로는 Ar, Cl, BCl를 단독 또는 혼합하여 사용하였으며, 식각 특성을 보기 위하여 RF Power, Substrate bias, Operation pressure, Substrate temperature를 변화시켰다. 식각속도는 stylus profiler를 이용하여 측정하였고, 단면 profile은 scanning electron microscopy (SEM)를 이용하여 관찰하였다. 식각 메커니즘을 규명하고자 식각된 박막의 표면을 X-ray photoelectron spectroscopy (XPS)로 관찰하였고, optical emission spectroscopy (OES)로 플라즈마 특성을 규명하고자 하였다. 식각속도는 Ar 또는 Cl2 플라즈마에 BCl3 가스를 혼합하였을 경우 증가되었고, BCl3 가스를 단독으로 사용하여도 높은 식각속도를 나타내었으며, BCl3의 첨가량이 늘어날수록 PR의 식각속도는 감소하여 높은 선택비를 보였다. 90% BCl3/10%Cl2 플라즈마에서 2800$\AA$/min의 식각속도 그리고 1.37:1의 PR 선택비를 얻을 수 있었다. Power나 기판 bias 증가에 따라 식각속도는 증가하였으나 기판 온도변화에는 민감하지 않았다. BCl3 rich에서의 식각속도 증가와 선택비 증가는 B2O3의 형성에 의한 것으로 생각된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.238-246
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• 2011

A 3-5 GHz UWB radar chip in 0.13 ${\mu}m$ CMOS process is presented in this paper. The UWB radar transceiver for surveillance and biometric applications adopts the equivalent time sampling architecture and 4-channel time interleaved samplers to relax the impractical sampling frequency and enhance the overall scanning time. The RF front end (RFFE) includes the wideband LNA and 4-way RF power splitter, and the analog signal processing part consists of the high speed track & hold (T&H) / sample & hold (S&H) and integrator. The interleaved timing clocks are generated using a delay locked loop. The UWB transmitter employs the digitally synthesized topology. The measured NF of RFFE is 9.5 dB in 3-5 GHz. And DLL timing resolution is 50 ps. The measured spectrum of UWB transmitter shows the center frequency within 3-5 GHz satisfying the FCC spectrum mask. The power consumption of receiver and transmitter are 106.5 mW and 57 mW at 1.5 V supply, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.391-394
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• 2003

Laser direct writing process is developed 3rd harmonic Diode Pumped Solid State Laser with the near visible wavelength of 355 m sensitive polymer is irradiated by UV laser and developed using polymer solvent to obtain quasi-3D. It is important to reduce line width for image mode waveguides, so some investigations will be carried out in various conditions of process parameters such as laser power, writing speed, laser focus and optical properties of polymer. This process could be to fabricate a single mode waveguide without expensive mask projection method. Experimentally, the patterns of trapezoidal shape were manufactured into dimension of 8.4 mm width and 7.5 mm height. Propagation loss of straight waveguide measured 3 dB/cm at 1,550 nm.

• 전기의세계
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• v.27 no.4
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• Journal of Communications and Networks
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• v.12 no.5
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• pp.459-465
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• 2010

A new blind equalization algorithm that is based on maximizing the probability that the constant modulus errors concentrate near zero is proposed. The cost function of the proposed algorithm is to maximize the probability that the equalizer output power is equal to the constant modulus of the transmitted symbols. Two blind information-theoretic learning (ITL) algorithms based on constant modulus error signals are also introduced: One for minimizing the Euclidean probability density function distance and the other for minimizing the constant modulus error entropy. The relations between the algorithms and their characteristics are investigated, and their performance is compared and analyzed through simulations in multi-path channel environments. The proposed algorithm has a lower computational complexity and a faster convergence speed than the other ITL algorithms that are based on a constant modulus error. The error samples of the proposed blind algorithm exhibit more concentrated density functions and superior error rate performance in severe multi-path channel environments when compared with the other algorithms.