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http://dx.doi.org/10.5573/JSTS.2015.15.4.454

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power  

Mustary, Mumta Hena (Centre for Quantum Dynamics, School of Natural Sciences, Griffith University)
Ryu, Beo Deul (School of Semiconductor and Chemical Engineering, Chonbuk National University)
Han, Min (School of Semiconductor and Chemical Engineering, Chonbuk National University)
Yang, Jong Han (School of Semiconductor and Chemical Engineering, Chonbuk National University)
Lysak, Volodymyr V. (Department of Nanotechnology and Material Science, ITMO University)
Hong, Chang-Hee (School of Semiconductor and Chemical Engineering, Chonbuk National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.15, no.4, 2015 , pp. 454-461 More about this Journal
Abstract
Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.
Keywords
Light emitting diode; nano porous; nano cluster; rapid thermal annealing (RTA); finite difference time domain (FDTD);
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