• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.5
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• pp.412-419
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• 2020

In this study, a 70 W buck converter using GaN metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. This converter exhibits over 97 % efficiency, high power density, and 48 V-to-12 V/1.2 V/1 V (triple output). Three gate drivers and six GaN MOSFETs are placed in a 1 ㎠ area to enhance power density and heat dissipation capacity. The theoretical switching and conduction losses of the GaN MOSFETs are calculated. Inductances, capacitances, and resistances for the output filters of the three buck converters are determined to achieve the desired current, voltage ripples, and efficiency. An equivalent circuit model for the thermal analysis of the proposed triple-output buck converter is presented. The junction temperatures of the GaN MOSFETs are estimated using the thermal model. Circuit operation and temperature analysis are evaluated using a circuit simulation tool and the finite element analysis results. An experimental test bed is built to evaluate the proposed design. The estimated switch and heat sink temperatures coincide well with the measured results. The designed buck converter has 130 W/in³ power density and 97.6 % efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• Journal of Power Electronics
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• v.15 no.2
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• pp.389-398
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• 2015

This paper presents a 1.92 kW resonant converter for medium voltage applications that uses low voltage stress MOSFETs (500V) to achieve zero voltage switching (ZVS) turn-on. In the proposed converter, four MOSFETs are connected in series to limit the voltage stress of the power switches at half of the input voltage. In addition, three resonant circuits are adopted to share the load current and to reduce the current stress of the passive components. Furthermore, the transformer primary and secondary windings are connected in series to balance the output diode currents for medium power applications. Split capacitors are adopted in each resonant circuit to reduce the current stress of the resonant capacitors. Two balance capacitors are also used to automatically balance the input capacitor voltage in every switching cycle. Based on the circuit characteristics of the resonant converter, the MOSFETs are turned on under ZVS. If the switching frequency is less than the series resonant frequency, the rectifier diodes can be turned off under zero current switching (ZCS). Experimental results from a prototype with a 750-800 V input and a 48V/40A output are provided to verify the theoretical analysis and the effectiveness of the proposed converter.

• Journal of Power Electronics
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• v.5 no.4
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• pp.247-256
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• 2005

In order to harvest power in an efficient manner from a micro piezoelectric (PZT) device for charging the battery of a remote system, a new AC/DC resonant pulse power converter is proposed. The proposed power converter has two stages in the power conversion process. The first stage includes N-type MOSFET full bridge rectifier. The second stage includes a boost converter having an N-type MOSFET and a P-type MOSFET. MOSFETs work in the $1^{st}$ or $3^{rd}$ quadrant region. A small inductor for the boost converter is assigned in order to make the size of the power converter as small as possible, which makes the on-interval of the MOSFET switch of the boost converter ultimately short. Due to this short on-interval, the parasitic junction capacitances of MOSFETs affect the performance of the power converter system. In this paper, the performance of the new converter is analytically and experimentally evaluated with consideration of the parasitic capacitance of switching devices.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1632-1642
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• 2014

This paper presents an interleaved resonant converter to reduce the voltage stress of power MOSFETs and achieve high circuit efficiency. Two half-bridge converters are connected in series at high voltage side to limit MOSFETs at $V_{in}/2$ voltage stress. Flying capacitor is used between two series half-bridge converters to balance two input capacitor voltages in each switching cycle. Variable switching frequency scheme is used to control the output voltage. The resonant circuit is operated at the inductive load. Thus, the input current of the resonant circuit is lagging to the fundamental input voltage. Power MOSFETs can be turn on under zero voltage switching. Two resonant circuits are connected in parallel to reduce the current stress of transformer windings and rectifier diodes at low voltage side. Interleaved pulse-width modulation is adopted to decrease the output ripple current. Finally, experiments are presented to demonstrate the performance of the proposed converter.

• Journal of Power Electronics
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• v.18 no.2
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• pp.375-382
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• 2018

A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

• Journal of Power Electronics
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• v.14 no.2
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.1
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• pp.24-29
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• 2003

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute(KAERI) in Taejon to supply power with Korea Superconducting Tokamak Advanced Research(KSTAR) Neutral Beam Injection(NBI) system. NBI system requires fast cutoff of the flower supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply. There are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply. Various results taken during the commissioning phase with a 100kW resistive load and NBI source arc shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver during thefabrication and test and solutions are also presented.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.251-258
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• 1994

To apply the Power MOSFET to the high powerd circuits, the parallel operation of the Power MOSFET must be considered because of their low power rating. This means, in practical applications, design methods for the parallel operations are required. However, it is very difficult to investigate the problem of parallel operations by directly changing the internal parameters of the MOSFET. Thus, in this paper, the effects of internal parameters for the parallel operation are investigated using SPICE program which is often used and known that the program is very reliable. The investigation results show that while the gate resistance and gate capacitances are the parameters which affect to the dynamic switching operations, the drain and source resistances are the parameters which affect to the steady-state current unbalances. Through this investigation, the design methods for the parallel operation of the MOSFET are suggested, which, in turn, contributes to the practical use of Power MOSFETs.