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http://dx.doi.org/10.4313/JKEM.2020.33.1.78

Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)  

Cho, Kyu Jun (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
Mun, Jae-Kyong (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
Chang, Woojin (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.33, no.1, 2020 , pp. 78-82 More about this Journal
Abstract
In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.
Keywords
$Ga_2O_3$; MOSFET; Breakdown voltage; On-off current ratio;
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1 K. Shimamura, E. G. Villora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, Jpn. J. Appl. Phys., 44, L7 (2005). [DOI: https://doi.org/10.1143/jjap.44.l7]   DOI
2 M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]   DOI
3 M. Higashiwaki, A. Kuramata, H. Murakami, and Y. Kumagai, J. Phys. D: Appl. Phys., 50, 333002 (2017). [DOI: https://doi.org/10.1088/1361-6463/aa7aff]   DOI
4 J. K. Mun, K. Cho, W. Chang, H. Lee, S. Bae, J. Kim, and H. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 32, 201 (2019). [DOI: https://doi.org/10.4313/JKEM.2019.32.3.201]   DOI
5 J. K. Mun, K. J. Cho, J. W. Do, H. S. Lee, S. B. Bae, and W. J. Chang, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2018 (CDM THE BIG, Goseong-Gun, Korea, 2018) p. 35.
6 J. K. Mun, K. J. Cho, W. J. Chang, and H. Jung, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (CDM THE BIG, Heongsung-Gun, Korea, 2019) p. 31.
7 B. J. Baliga, IEEE Electron Device Lett., 10, 455 (1989). [DOI: https://doi.org/10.1109/55.43098]   DOI
8 M. Baldini, Z. Galazka, and G. Wagner, Mater. Sci. Semicond. Process., 78, 132 (2018). [DOI: https://doi.org/10.1016/j.mssp.2017.10.040]   DOI
9 A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, A. N. Tereshchenko, and S. J. Pearton, ECS. J. Solid State Sci. Technol., 8, Q3091 (2019). [DOI: https://doi.org/10.1149/2.0171907jss]   DOI
10 A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, and A. I. Kochkova, Appl. Phys. Lett., 113, 142102 (2018). [DOI: https://doi.org/10.1063/1.5051986]   DOI
11 H. Yu, M. Schaekers, T. Schram, N. Collaert, K. D. Meyer, N. Horiguchi, A. Thean, and K. Barla, IEEE Electron Device Lett., 35, 957 (2014). [DOI: https://doi.org/10.1109/led.2014.2340821]   DOI
12 K. J. Cho, H. Jung, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 37.
13 S. Jakschik, U. Schroeder, T. Hecht, M. Gutsche, H. Seidl, and J. W. Bartha, Thin Solid Films, 425, 216 (2013). [DOI:https://doi.org/10.1016/s0040-6090(02)01262-2]   DOI
14 J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, Semicond. Sci. Technol., 31, 065006 (2016). [DOI:https://doi.org/10.1088/0268-1242/31/6/065006]   DOI
15 L. Zhang, A. Verma, H. G. Xing, and D. Jena, Jpn. J. Appl. Phys., 56, 030304 (2017). [DOI: https://doi.org/10.7567/jjap.56.030304]   DOI
16 J. Yang, S. Ahn, F. Ren, S. Pearton, R. Khanna, K. Bevlin, D. Geerpuram, and A. Kuramata, J. Vac. Sci. Technol., B, 35, 031205 (2017). [DOI: https://doi.org/10.1116/1.4982714]   DOI
17 H. Jung, K. J. Cho, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 61.