Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V) |
Cho, Kyu Jun
(RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
Mun, Jae-Kyong (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) Chang, Woojin (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) |
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